Novel Reconfigurable Transistor with Extended Source/Drain beyond 3 nm Technology Node

In this work, a novel stacked nanosheet reconfigurable field effect transistor with extended source/drain (ESD-NSRFET) is proposed to improve ON-current ({I} _{ \mathrm{\scriptscriptstyle ON}}$ ), where an additional extended source/drain is intersected between the vertically stacked nanosheets. Compared to the conventional nanosheet RFET (NSRFET), {I} _{ \mathrm{\scriptscriptstyle ON}}$ of proposed ESD-NSRFET with 4 nm extended source is demonstrated to improve by 176\times $ and 80\times $ for n-type and p-type program, respectively. Geometry parameters like extended source/drain length {L} _{\text {ESD}}$ , nanosheet width {W} _{\text {NS}}$ , and nanosheet thickness {T} _{\text {NS}}$ are investigated in point of {I} _{ \mathrm{\scriptscriptstyle ON}}$. Considering the trade-off between increased tunneling strength and degraded parasitic source resistance, {L} _{\text {ESD}}$ in ESD-NSRFET should be carefully designed to obtain optimal current. The underlying physical mechanism is also discussed in detail.