Novel Reconfigurable Field-Effect Transistor with Surrounded Source/Drain to Improve On-State Current

In this article, a novel reconfigurable field-effect transistor with surrounded source and drain (SSDRFET) is proposed to improve ON-state current. Compared to the conventional nanosheet reconfigurable transistor (NSRFET), the source and drain in SSDRFET are surrounded by a silicon channel and metal gate, and a higher tunneling probability and gate control ability are obtained. And, 5.52 and 4.92 times improvement of ON-state current (ION) separately exists for n-type and p-type SSDRFET. The performance under different geometry parameters, including source/drain diameter (Dsd), source/drain distance (Lsd), control gate (CG) length, and program gate (PG) length are investigated by using 3-D TCAD simulation. The results show that size parameters need to be selected carefully to get a better performance. Furthermore, the reduced gate capacitance and improved ION contribute to the more advantageous inverter based on SSDRFET, reducing about 70% of propagation delay. The underlying physical mechanisms are discussed in detail.