Novel method to determine base resistance in SiGe HBT HICUM based on rational function fitting

  • Yabin Sun*
  • , Jun Fu
  • , Ji Yang
  • , Jun Xu
  • , Yudong Wang
  • , Wei Zhou
  • , Wei Zhang
  • , Jie Cui
  • , Zhihong Liu
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

An accurate and efficient base resistance (RB) extraction methodology for SiGe HBT HICUM model is developed in this paper. Differing from previous methods, the proposed technique is based on the rational function fitting. Two formulas are used to determine the lower and upper limits of RB, and then RB is confined to a very narrow range and can be estimated analytically only from S-parameter data, without any special structures or numerical optimization. The proposed method is successfully applied to SiGe HBTs with different device geometries. Results demonstrate that the average error for extracted RB is less than 2.5% over a wide range of bias points. Therefore, we believe that the proposed technique is a reliable routine applicable to estimation of the base resistance for SiGe HBT HICUM model.

Original languageEnglish
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
EditorsJia Zhou, Ting-Ao Tang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479932962
DOIs
StatePublished - 23 Jan 2014
Externally publishedYes
Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: 28 Oct 201431 Oct 2014

Publication series

NameProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Conference

Conference2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/TerritoryChina
CityGuilin
Period28/10/1431/10/14

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