Novel method to determine base resistance in sige HBT from small-signal S-parameters measurement

Yabin Sun; Jun Fu; Yudong Wang; Wei Zhou; Xiaojin Li; Yanling Shi

doi:10.1002/mop.30341

Novel method to determine base resistance in sige HBT from small-signal S-parameters measurement

Yabin Sun^*
, Jun Fu
, Yudong Wang
, Wei Zhou
, Xiaojin Li
, Yanling Shi

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A novel and robust method to determine the internal variable base resistance (R_B) of SiGe HBT from small-signal S-parameters measurement is developed in present work. The proposed method is adopted in two kinds of SiGe HBT compact models, MEXTRAM and HICUM. With the aid of auxiliary collector resistance, the lower and upper limits of R_B are built up and a narrow variation range of R_B is obtained. Thus, R_B can be directly estimated from the small-signal S-parameters measurement. The proposed method is successfully applied to several sizes of SiGe HBTs and the experiment results shows that average error between the lower and upper limits of R_B is less than 3% over a wide range of bias points, which can satisfy the demands of most engineering applications. Therefore, we believe that the proposed technique is a reliable routine applicable to estimate the base resistance in SiGe HBTs.

Original language	English
Pages (from-to)	555-560
Number of pages	6
Journal	Microwave and Optical Technology Letters
Volume	59
Issue number	3
DOIs	https://doi.org/10.1002/mop.30341
State	Published - 1 Mar 2017

Keywords

SiGe HBT
base resistance
compact model
small-signal S-parameters

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10.1002/mop.30341

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title = "Novel method to determine base resistance in sige HBT from small-signal S-parameters measurement",

abstract = "A novel and robust method to determine the internal variable base resistance (RB) of SiGe HBT from small-signal S-parameters measurement is developed in present work. The proposed method is adopted in two kinds of SiGe HBT compact models, MEXTRAM and HICUM. With the aid of auxiliary collector resistance, the lower and upper limits of RB are built up and a narrow variation range of RB is obtained. Thus, RB can be directly estimated from the small-signal S-parameters measurement. The proposed method is successfully applied to several sizes of SiGe HBTs and the experiment results shows that average error between the lower and upper limits of RB is less than 3\% over a wide range of bias points, which can satisfy the demands of most engineering applications. Therefore, we believe that the proposed technique is a reliable routine applicable to estimate the base resistance in SiGe HBTs.",

keywords = "SiGe HBT, base resistance, compact model, small-signal S-parameters",

author = "Yabin Sun and Jun Fu and Yudong Wang and Wei Zhou and Xiaojin Li and Yanling Shi",

note = "Publisher Copyright: {\textcopyright} 2017 Wiley Periodicals, Inc.",

year = "2017",

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doi = "10.1002/mop.30341",

language = "英语",

volume = "59",

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journal = "Microwave and Optical Technology Letters",

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TY - JOUR

T1 - Novel method to determine base resistance in sige HBT from small-signal S-parameters measurement

AU - Sun, Yabin

AU - Fu, Jun

AU - Wang, Yudong

AU - Zhou, Wei

AU - Li, Xiaojin

AU - Shi, Yanling

PY - 2017/3/1

Y1 - 2017/3/1

N2 - A novel and robust method to determine the internal variable base resistance (RB) of SiGe HBT from small-signal S-parameters measurement is developed in present work. The proposed method is adopted in two kinds of SiGe HBT compact models, MEXTRAM and HICUM. With the aid of auxiliary collector resistance, the lower and upper limits of RB are built up and a narrow variation range of RB is obtained. Thus, RB can be directly estimated from the small-signal S-parameters measurement. The proposed method is successfully applied to several sizes of SiGe HBTs and the experiment results shows that average error between the lower and upper limits of RB is less than 3% over a wide range of bias points, which can satisfy the demands of most engineering applications. Therefore, we believe that the proposed technique is a reliable routine applicable to estimate the base resistance in SiGe HBTs.

AB - A novel and robust method to determine the internal variable base resistance (RB) of SiGe HBT from small-signal S-parameters measurement is developed in present work. The proposed method is adopted in two kinds of SiGe HBT compact models, MEXTRAM and HICUM. With the aid of auxiliary collector resistance, the lower and upper limits of RB are built up and a narrow variation range of RB is obtained. Thus, RB can be directly estimated from the small-signal S-parameters measurement. The proposed method is successfully applied to several sizes of SiGe HBTs and the experiment results shows that average error between the lower and upper limits of RB is less than 3% over a wide range of bias points, which can satisfy the demands of most engineering applications. Therefore, we believe that the proposed technique is a reliable routine applicable to estimate the base resistance in SiGe HBTs.

KW - SiGe HBT

KW - base resistance

KW - compact model

KW - small-signal S-parameters

UR - https://www.scopus.com/pages/publications/85010441740

U2 - 10.1002/mop.30341

DO - 10.1002/mop.30341

M3 - 文章

AN - SCOPUS:85010441740

SN - 0895-2477

VL - 59

SP - 555

EP - 560

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 3

ER -

Novel method to determine base resistance in sige HBT from small-signal S-parameters measurement

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Keywords

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