Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements

Ji Yang, Jun Fu, Yabin Sun, Yudong Wang, Wei Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A simple dc method for determining the emitter series resistances of bipolar transistors from the measured forward-Gummel characteristics is proposed. The method is successfully applied to a set of SiGe HBTs with different sizes, which have been fabricated and measured over a large temperature range. As a result, the temperature scaling and geometric scaling characteristics of the extracted emitter series resistances are analyzed and discussed.

Original languageEnglish
Title of host publication2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479923342
DOIs
StatePublished - 13 Mar 2014
Externally publishedYes
Event2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China
Duration: 18 Jun 201420 Jun 2014

Publication series

Name2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Conference

Conference2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Country/TerritoryChina
CityChengdu
Period18/06/1420/06/14

Keywords

  • Emitter resistance
  • Forward-Gummel measurements
  • Scalble model
  • SiGe HBT

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