Nonvolatile memory devices based on gold nanoparticle and poly (N-vinylcarbazole) composite

  • Jian Lin
  • , Di Li
  • , Jiang Shan Chen
  • , Jing Hong Li
  • , Dong Ge Ma*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A rewritable polymer memory device based on gold nanoparticle doped poly (N-vinylcarbazole) (PVK), which can be easily fabricated by simple spin coating, has been described. An electrical bistable phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behaviour of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nonvolatile polymer memory devices.

Original languageEnglish
Pages (from-to)3280-3282
Number of pages3
JournalChinese Physics Letters
Volume24
Issue number11
DOIs
StatePublished - 1 Nov 2007
Externally publishedYes

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