Nonvolatile bidirectional photoresponse in a fully CMOS-compatible FeFET for in-sensor computing

Yuyan Fan; Wei Li; Jianquan Liu; Danyang Chen; Xinrui Ma; Tianning Cui; Zhiyu Lin; Mengwei Si; Jingquan Liu; Gang Liu; Bobo Tian; Xiuyan Li

doi:10.1063/5.0299857

Nonvolatile bidirectional photoresponse in a fully CMOS-compatible FeFET for in-sensor computing

Yuyan Fan
, Wei Li
, Jianquan Liu
, Danyang Chen
, Xinrui Ma
, Tianning Cui
, Zhiyu Lin
, Mengwei Si
, Jingquan Liu
, Gang Liu^*
, Bobo Tian^*
, Xiuyan Li^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

While bipolar phototransistors show promise for in-sensor computing, their incompatibility with standard complementary metal–oxide–semiconductor (CMOS) technology has hindered practical integration. In this work, we demonstrate nonvolatile bidirectional photoresponse using a fully CMOS-compatible metal–ferroelectric–metal–insulator–semiconductor ferroelectric field effect transistor with Hf_0.5Zr_0.5O₂ and IGZO materials. The key lies in a floating gate-based ferroelectric-tunable band alignment mechanism, achieving nonvolatile bipolar photoconductive states while reducing write power by two orders of magnitude. Furthermore, high-performance image processing tasks, including image sharpening, edge detection, and motion detection, are implemented using the device. This work presents a promising approach to CMOS-compatible hardware design for future in-sensor computing systems.

Original language	English
Article number	223303
Journal	Applied Physics Letters
Volume	127
Issue number	22
DOIs	https://doi.org/10.1063/5.0299857
State	Published - 1 Dec 2025

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10.1063/5.0299857

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title = "Nonvolatile bidirectional photoresponse in a fully CMOS-compatible FeFET for in-sensor computing",

abstract = "While bipolar phototransistors show promise for in-sensor computing, their incompatibility with standard complementary metal–oxide–semiconductor (CMOS) technology has hindered practical integration. In this work, we demonstrate nonvolatile bidirectional photoresponse using a fully CMOS-compatible metal–ferroelectric–metal–insulator–semiconductor ferroelectric field effect transistor with Hf0.5Zr0.5O2 and IGZO materials. The key lies in a floating gate-based ferroelectric-tunable band alignment mechanism, achieving nonvolatile bipolar photoconductive states while reducing write power by two orders of magnitude. Furthermore, high-performance image processing tasks, including image sharpening, edge detection, and motion detection, are implemented using the device. This work presents a promising approach to CMOS-compatible hardware design for future in-sensor computing systems.",

author = "Yuyan Fan and Wei Li and Jianquan Liu and Danyang Chen and Xinrui Ma and Tianning Cui and Zhiyu Lin and Mengwei Si and Jingquan Liu and Gang Liu and Bobo Tian and Xiuyan Li",

note = "Publisher Copyright: {\textcopyright} 2025 Author(s).",

year = "2025",

month = dec,

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doi = "10.1063/5.0299857",

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AU - Fan, Yuyan

AU - Li, Wei

AU - Liu, Jianquan

AU - Chen, Danyang

AU - Ma, Xinrui

AU - Cui, Tianning

AU - Lin, Zhiyu

AU - Si, Mengwei

AU - Liu, Jingquan

AU - Liu, Gang

AU - Tian, Bobo

AU - Li, Xiuyan

PY - 2025/12/1

Y1 - 2025/12/1

N2 - While bipolar phototransistors show promise for in-sensor computing, their incompatibility with standard complementary metal–oxide–semiconductor (CMOS) technology has hindered practical integration. In this work, we demonstrate nonvolatile bidirectional photoresponse using a fully CMOS-compatible metal–ferroelectric–metal–insulator–semiconductor ferroelectric field effect transistor with Hf0.5Zr0.5O2 and IGZO materials. The key lies in a floating gate-based ferroelectric-tunable band alignment mechanism, achieving nonvolatile bipolar photoconductive states while reducing write power by two orders of magnitude. Furthermore, high-performance image processing tasks, including image sharpening, edge detection, and motion detection, are implemented using the device. This work presents a promising approach to CMOS-compatible hardware design for future in-sensor computing systems.

AB - While bipolar phototransistors show promise for in-sensor computing, their incompatibility with standard complementary metal–oxide–semiconductor (CMOS) technology has hindered practical integration. In this work, we demonstrate nonvolatile bidirectional photoresponse using a fully CMOS-compatible metal–ferroelectric–metal–insulator–semiconductor ferroelectric field effect transistor with Hf0.5Zr0.5O2 and IGZO materials. The key lies in a floating gate-based ferroelectric-tunable band alignment mechanism, achieving nonvolatile bipolar photoconductive states while reducing write power by two orders of magnitude. Furthermore, high-performance image processing tasks, including image sharpening, edge detection, and motion detection, are implemented using the device. This work presents a promising approach to CMOS-compatible hardware design for future in-sensor computing systems.

UR - https://www.scopus.com/pages/publications/105024061479

U2 - 10.1063/5.0299857

DO - 10.1063/5.0299857

M3 - 文章

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SN - 0003-6951

VL - 127

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Nonvolatile bidirectional photoresponse in a fully CMOS-compatible FeFET for in-sensor computing

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