Non-contact electrical characterization of II-VI semiconductors by far-infrared reflection

Biao Li; Junhao Chu; Hongjuan Ye; Wei Jiang; Dingyuan Tang; Shanzhong Wang; Rongbin Ji; Li He

Non-contact electrical characterization of II-VI semiconductors by far-infrared reflection

Biao Li^*
, Junhao Chu
, Hongjuan Ye
, Wei Jiang
, Dingyuan Tang
, Shanzhong Wang
, Rongbin Ji
, Li He

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Based on the analysis on the spectral reflectance in the plasmon-phonon region, the carrier concentration, mobility, and resistivity were obtained non-destructively from the far-infrared reflection measurement for the II-VI group materials such as Hg_1-xCd_xTe and Zn Se.

Original language	English
Pages (from-to)	137-141
Number of pages	5
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	16
Issue number	2
State	Published - Apr 1997
Externally published	Yes

Cite this

@article{583f2810716f430783357dddb01c0754,

title = "Non-contact electrical characterization of II-VI semiconductors by far-infrared reflection",

abstract = "Based on the analysis on the spectral reflectance in the plasmon-phonon region, the carrier concentration, mobility, and resistivity were obtained non-destructively from the far-infrared reflection measurement for the II-VI group materials such as Hg1-xCdxTe and Zn Se.",

author = "Biao Li and Junhao Chu and Hongjuan Ye and Wei Jiang and Dingyuan Tang and Shanzhong Wang and Rongbin Ji and Li He",

year = "1997",

month = apr,

language = "英语",

volume = "16",

pages = "137--141",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "2",

}

TY - JOUR

T1 - Non-contact electrical characterization of II-VI semiconductors by far-infrared reflection

AU - Li, Biao

AU - Chu, Junhao

AU - Ye, Hongjuan

AU - Jiang, Wei

AU - Tang, Dingyuan

AU - Wang, Shanzhong

AU - Ji, Rongbin

AU - He, Li

PY - 1997/4

Y1 - 1997/4

N2 - Based on the analysis on the spectral reflectance in the plasmon-phonon region, the carrier concentration, mobility, and resistivity were obtained non-destructively from the far-infrared reflection measurement for the II-VI group materials such as Hg1-xCdxTe and Zn Se.

AB - Based on the analysis on the spectral reflectance in the plasmon-phonon region, the carrier concentration, mobility, and resistivity were obtained non-destructively from the far-infrared reflection measurement for the II-VI group materials such as Hg1-xCdxTe and Zn Se.

UR - https://www.scopus.com/pages/publications/0031119679

M3 - 文章

AN - SCOPUS:0031119679

SN - 1001-9014

VL - 16

SP - 137

EP - 141

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 2

ER -

Non-contact electrical characterization of II-VI semiconductors by far-infrared reflection

Abstract

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