Noise Characterization of Geiger-Mode 4H-SiC Avalanche Photodiodes for Ultraviolet Single-Photon Detection

Yurong Wang; Yang Lv; Yong Wang; Qiongqiong Zhang; Sen Yang; Dong Zhou; Hai Lu; E. Wu; Guang Wu

doi:10.1109/JSTQE.2017.2737584

Noise Characterization of Geiger-Mode 4H-SiC Avalanche Photodiodes for Ultraviolet Single-Photon Detection

Yurong Wang, Yang Lv, Yong Wang, Qiongqiong Zhang, Sen Yang, Dong Zhou, Hai Lu, E. Wu, Guang Wu

Institute for Advanced Study in Precision Spectroscopy

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We present here the noise properties of the 4H-SiC avalanche photodiodes (APD) operated in Geiger mode. After-pulse events together with the dark count rate were measured at different temperatures. We found that at a certain bias voltage, the after-pulse probability of the 4H-SiC APD was dependent on the incident photon flux. This interesting observation may be useful to build a photon-number resolving detector for the UV regime. Moreover, the after-pulse and the dark counts noise decreased as the temperature dropped from room temperature to-;40 °C so that the single-photon detection performance of the 4H-SiC APD could be improved by decreasing the operation temperature.

Original language	English
Article number	8004436
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	24
Issue number	2
DOIs	https://doi.org/10.1109/JSTQE.2017.2737584
State	Published - 1 Mar 2018

Keywords

Avalanche photodiodes (APDs)
photodetectors
silicon carbide (SiC)
ultraviolet (UV) single-photon detection

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10.1109/JSTQE.2017.2737584

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title = "Noise Characterization of Geiger-Mode 4H-SiC Avalanche Photodiodes for Ultraviolet Single-Photon Detection",

abstract = "We present here the noise properties of the 4H-SiC avalanche photodiodes (APD) operated in Geiger mode. After-pulse events together with the dark count rate were measured at different temperatures. We found that at a certain bias voltage, the after-pulse probability of the 4H-SiC APD was dependent on the incident photon flux. This interesting observation may be useful to build a photon-number resolving detector for the UV regime. Moreover, the after-pulse and the dark counts noise decreased as the temperature dropped from room temperature to-;40 °C so that the single-photon detection performance of the 4H-SiC APD could be improved by decreasing the operation temperature.",

keywords = "Avalanche photodiodes (APDs), photodetectors, silicon carbide (SiC), ultraviolet (UV) single-photon detection",

author = "Yurong Wang and Yang Lv and Yong Wang and Qiongqiong Zhang and Sen Yang and Dong Zhou and Hai Lu and E. Wu and Guang Wu",

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T1 - Noise Characterization of Geiger-Mode 4H-SiC Avalanche Photodiodes for Ultraviolet Single-Photon Detection

AU - Wang, Yurong

AU - Lv, Yang

AU - Wang, Yong

AU - Zhang, Qiongqiong

AU - Yang, Sen

AU - Zhou, Dong

AU - Lu, Hai

AU - Wu, E.

AU - Wu, Guang

PY - 2018/3/1

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N2 - We present here the noise properties of the 4H-SiC avalanche photodiodes (APD) operated in Geiger mode. After-pulse events together with the dark count rate were measured at different temperatures. We found that at a certain bias voltage, the after-pulse probability of the 4H-SiC APD was dependent on the incident photon flux. This interesting observation may be useful to build a photon-number resolving detector for the UV regime. Moreover, the after-pulse and the dark counts noise decreased as the temperature dropped from room temperature to-;40 °C so that the single-photon detection performance of the 4H-SiC APD could be improved by decreasing the operation temperature.

AB - We present here the noise properties of the 4H-SiC avalanche photodiodes (APD) operated in Geiger mode. After-pulse events together with the dark count rate were measured at different temperatures. We found that at a certain bias voltage, the after-pulse probability of the 4H-SiC APD was dependent on the incident photon flux. This interesting observation may be useful to build a photon-number resolving detector for the UV regime. Moreover, the after-pulse and the dark counts noise decreased as the temperature dropped from room temperature to-;40 °C so that the single-photon detection performance of the 4H-SiC APD could be improved by decreasing the operation temperature.

KW - Avalanche photodiodes (APDs)

KW - photodetectors

KW - silicon carbide (SiC)

KW - ultraviolet (UV) single-photon detection

UR - https://www.scopus.com/pages/publications/85028946979

U2 - 10.1109/JSTQE.2017.2737584

DO - 10.1109/JSTQE.2017.2737584

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JO - IEEE Journal of Selected Topics in Quantum Electronics

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ER -

Noise Characterization of Geiger-Mode 4H-SiC Avalanche Photodiodes for Ultraviolet Single-Photon Detection

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Keywords

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