Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Shuang Guo; Yunfeng Wang; Xiaolong Zhang; Bao Wang; Jinzhong Zhang

doi:10.1016/j.matlet.2022.133199

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Shuang Guo^*
, Yunfeng Wang
, Xiaolong Zhang
, Bao Wang
, Jinzhong Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crystalline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline N_x(GeTe)_1-x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.

Original language	English
Article number	133199
Journal	Materials Letters
Volume	329
DOIs	https://doi.org/10.1016/j.matlet.2022.133199
State	Published - 15 Dec 2022
Externally published	Yes

Keywords

Crystal structure
Localized states
Nitrogen doped GeTe
Optical band gap
Phase transformation

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10.1016/j.matlet.2022.133199

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title = "Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films",

abstract = "The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crystalline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline Nx(GeTe)1-x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.",

keywords = "Crystal structure, Localized states, Nitrogen doped GeTe, Optical band gap, Phase transformation",

author = "Shuang Guo and Yunfeng Wang and Xiaolong Zhang and Bao Wang and Jinzhong Zhang",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = dec,

day = "15",

doi = "10.1016/j.matlet.2022.133199",

language = "英语",

volume = "329",

journal = "Materials Letters",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

AU - Guo, Shuang

AU - Wang, Yunfeng

AU - Zhang, Xiaolong

AU - Wang, Bao

AU - Zhang, Jinzhong

PY - 2022/12/15

Y1 - 2022/12/15

N2 - The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crystalline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline Nx(GeTe)1-x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.

AB - The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crystalline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline Nx(GeTe)1-x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.

KW - Crystal structure

KW - Localized states

KW - Nitrogen doped GeTe

KW - Optical band gap

KW - Phase transformation

UR - https://www.scopus.com/pages/publications/85138779498

U2 - 10.1016/j.matlet.2022.133199

DO - 10.1016/j.matlet.2022.133199

M3 - 文章

AN - SCOPUS:85138779498

SN - 0167-577X

VL - 329

JO - Materials Letters

JF - Materials Letters

M1 - 133199

ER -

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

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Keywords

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