Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

Cheng Peng; Liangcai Wu; Feng Rao; Zhitang Song; Xilin Zhou; Min Zhu; Bo Liu; Dongning Yao; Songlin Feng; Pingxiong Yang; Junhao Chu

doi:10.1016/j.scriptamat.2011.04.033

Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

Cheng Peng^*
, Liangcai Wu
, Feng Rao
, Zhitang Song
, Xilin Zhou
, Min Zhu
, Bo Liu
, Dongning Yao
, Songlin Feng
, Pingxiong Yang
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

The crystallization temperature of GeTe film increases markedly from 187 to 372 °C as a result of 9.81 at.% nitrogen doping, and a rhombohedral- rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 10⁵ cycles of endurance for phase change memory (PCM) cells based on GeTeN have been achieved. Extrafine data retention (10 years at 241 °C) and relatively low power consumption suggest GeTeN as a promising alternative material to improve the performance of PCM.

Original language	English
Pages (from-to)	327-330
Number of pages	4
Journal	Scripta Materialia
Volume	65
Issue number	4
DOIs	https://doi.org/10.1016/j.scriptamat.2011.04.033
State	Published - Aug 2011

Keywords

Data retention
GeTeN film
Phase change memory
Power consumption

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10.1016/j.scriptamat.2011.04.033

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title = "Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application",

abstract = "The crystallization temperature of GeTe film increases markedly from 187 to 372 °C as a result of 9.81 at.\% nitrogen doping, and a rhombohedral- rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 105 cycles of endurance for phase change memory (PCM) cells based on GeTeN have been achieved. Extrafine data retention (10 years at 241 °C) and relatively low power consumption suggest GeTeN as a promising alternative material to improve the performance of PCM.",

keywords = "Data retention, GeTeN film, Phase change memory, Power consumption",

author = "Cheng Peng and Liangcai Wu and Feng Rao and Zhitang Song and Xilin Zhou and Min Zhu and Bo Liu and Dongning Yao and Songlin Feng and Pingxiong Yang and Junhao Chu",

year = "2011",

month = aug,

doi = "10.1016/j.scriptamat.2011.04.033",

language = "英语",

volume = "65",

pages = "327--330",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

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}

TY - JOUR

T1 - Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

AU - Peng, Cheng

AU - Wu, Liangcai

AU - Rao, Feng

AU - Song, Zhitang

AU - Zhou, Xilin

AU - Zhu, Min

AU - Liu, Bo

AU - Yao, Dongning

AU - Feng, Songlin

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2011/8

Y1 - 2011/8

N2 - The crystallization temperature of GeTe film increases markedly from 187 to 372 °C as a result of 9.81 at.% nitrogen doping, and a rhombohedral- rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 105 cycles of endurance for phase change memory (PCM) cells based on GeTeN have been achieved. Extrafine data retention (10 years at 241 °C) and relatively low power consumption suggest GeTeN as a promising alternative material to improve the performance of PCM.

AB - The crystallization temperature of GeTe film increases markedly from 187 to 372 °C as a result of 9.81 at.% nitrogen doping, and a rhombohedral- rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 105 cycles of endurance for phase change memory (PCM) cells based on GeTeN have been achieved. Extrafine data retention (10 years at 241 °C) and relatively low power consumption suggest GeTeN as a promising alternative material to improve the performance of PCM.

KW - Data retention

KW - GeTeN film

KW - Phase change memory

KW - Power consumption

UR - https://www.scopus.com/pages/publications/79958204962

U2 - 10.1016/j.scriptamat.2011.04.033

DO - 10.1016/j.scriptamat.2011.04.033

M3 - 文章

AN - SCOPUS:79958204962

SN - 1359-6462

VL - 65

SP - 327

EP - 330

JO - Scripta Materialia

JF - Scripta Materialia

IS - 4

ER -

Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

Abstract

Keywords

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