@inproceedings{bc1985444ad44ec9b6dfd1bde28528c5,
title = "New Insights into TDDB in FinFET Based on Strain Analysis at the Atomistic Scale",
abstract = "Gate dielectric time-dependent dielectric breakdown (TDDB) is a critical reliability concern in FinFET devices. However, the microscopic failure mechanism of on-state TDDB (|Vgs| > 0, |Vds| > 0) is different from Vgs-only TDDB (|Vgs| > 0, |Vds| =0) due to the impact of channel current. In this study, aberration-corrected scanning transmission electron microscopy (STEM) and advanced strain analysis are employed to observe the physical evolution during the breakdown process of FinFETs from an atomic perspective. It is discovered that breakdown-induced silicon epitaxial defects are generated at the corners of the fin for Vgs -only TDDB, while shifted to the middle of the fin for on-state TDDB. The formation of these defects on the Si <110> orientation is accompanied by tensile strain. This work provides new insights into different types of TDDB phenomena in FinFETs at the atomic scale.",
keywords = "Atomic-scale defect, FinFET, Strain analysis, TDDB, TEM",
author = "Zuoyuan Dong and Zixuan Sun and Lan Li and Zirui Wang and Changqing Ye and Yu Yao and Jialu Huang and Xiaomei Li and Xing Wu and Runsheng Wang",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 2025 IEEE International Reliability Physics Symposium, IRPS 2025 ; Conference date: 30-03-2025 Through 03-04-2025",
year = "2025",
doi = "10.1109/IRPS48204.2025.10983565",
language = "英语",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings",
address = "美国",
}