Negative capacitance switching via VO2 band gap engineering driven by electric field

Xinfeng He; Jing Xu; Xiaofeng Xu; Congcong Gu; Fei Chen; Binhe Wu; Chunrui Wang; Huaizhong Xing; Xiaoshuang Chen; Junhao Chu

doi:10.1063/1.4914013

Negative capacitance switching via VO₂ band gap engineering driven by electric field

Xinfeng He
, Jing Xu
, Xiaofeng Xu
, Congcong Gu
, Fei Chen
, Binhe Wu
, Chunrui Wang
, Huaizhong Xing
, Xiaoshuang Chen
, Junhao Chu

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report the negative capacitance behavior of an energy band gap modulation quantum well with a sandwich VO₂ layer structure. The phase transition is probed by measuring its capacitance. With the help of theoretical calculations, it shows that the negative capacitance changes of the quantum well device come from VO₂ band gap by continuously tuning the temperature or voltage. Experiments reveal that as the current remains small enough, joule heating can be ignored, and the insulator-metal transition of VO₂ can be induced by the electric field. Our results open up possibilities for functional devices with phase transitions induced by external electric fields other than the heating or electricity-heat transition.

Original language	English
Article number	093106
Journal	Applied Physics Letters
Volume	106
Issue number	9
DOIs	https://doi.org/10.1063/1.4914013
State	Published - 2 Mar 2015
Externally published	Yes

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10.1063/1.4914013

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title = "Negative capacitance switching via VO2 band gap engineering driven by electric field",

abstract = "We report the negative capacitance behavior of an energy band gap modulation quantum well with a sandwich VO2 layer structure. The phase transition is probed by measuring its capacitance. With the help of theoretical calculations, it shows that the negative capacitance changes of the quantum well device come from VO2 band gap by continuously tuning the temperature or voltage. Experiments reveal that as the current remains small enough, joule heating can be ignored, and the insulator-metal transition of VO2 can be induced by the electric field. Our results open up possibilities for functional devices with phase transitions induced by external electric fields other than the heating or electricity-heat transition.",

author = "Xinfeng He and Jing Xu and Xiaofeng Xu and Congcong Gu and Fei Chen and Binhe Wu and Chunrui Wang and Huaizhong Xing and Xiaoshuang Chen and Junhao Chu",

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doi = "10.1063/1.4914013",

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TY - JOUR

T1 - Negative capacitance switching via VO2 band gap engineering driven by electric field

AU - He, Xinfeng

AU - Xu, Jing

AU - Xu, Xiaofeng

AU - Gu, Congcong

AU - Chen, Fei

AU - Wu, Binhe

AU - Wang, Chunrui

AU - Xing, Huaizhong

AU - Chen, Xiaoshuang

AU - Chu, Junhao

PY - 2015/3/2

Y1 - 2015/3/2

N2 - We report the negative capacitance behavior of an energy band gap modulation quantum well with a sandwich VO2 layer structure. The phase transition is probed by measuring its capacitance. With the help of theoretical calculations, it shows that the negative capacitance changes of the quantum well device come from VO2 band gap by continuously tuning the temperature or voltage. Experiments reveal that as the current remains small enough, joule heating can be ignored, and the insulator-metal transition of VO2 can be induced by the electric field. Our results open up possibilities for functional devices with phase transitions induced by external electric fields other than the heating or electricity-heat transition.

AB - We report the negative capacitance behavior of an energy band gap modulation quantum well with a sandwich VO2 layer structure. The phase transition is probed by measuring its capacitance. With the help of theoretical calculations, it shows that the negative capacitance changes of the quantum well device come from VO2 band gap by continuously tuning the temperature or voltage. Experiments reveal that as the current remains small enough, joule heating can be ignored, and the insulator-metal transition of VO2 can be induced by the electric field. Our results open up possibilities for functional devices with phase transitions induced by external electric fields other than the heating or electricity-heat transition.

UR - https://www.scopus.com/pages/publications/84924121740

U2 - 10.1063/1.4914013

DO - 10.1063/1.4914013

M3 - 文章

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SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093106

ER -

Negative capacitance switching via VO₂ band gap engineering driven by electric field

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