Needle-like quantum dots effectively guide conductive filaments in hafnium-based memory devices

Na Bai; Lanqing Zou; Jun Hui Yuan; Tao Wang; Li Li; Huajun Sun; Weiming Cheng; Xiaodong Tang; Hong Lu; Xiangshui Miao

doi:10.1016/j.matlet.2024.136228

Needle-like quantum dots effectively guide conductive filaments in hafnium-based memory devices

Na Bai, Lanqing Zou, Jun Hui Yuan, Tao Wang, Li Li, Huajun Sun, Weiming Cheng, Xiaodong Tang, Hong Lu, Xiangshui Miao

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, self-assembled needle-like quantum dots (CdSe-ZnS QDs) are used to enhance the local electric fields, and the formation/rupture of CFs happens at the QDs/HfO_x interface, greatly reducing the randomness of CFs generation. The consistency has been significantly improved. SET voltage's coefficient of variation (δ/μ) decreased from 13.8% to 6.7%, while δ/μ of low resistive state (LRS) even became as low as 1.56%. The QDs-HfO_x device can realize multi-level conductance modulation and mimic the behavior of long-term potentiation (LTP) and long-term depression (LTD). Further, The MNIST handwritten recognition dataset achieved high recognition accuracies (93.96%) for neuromorphic simulations. The device shows tremendous potential in neural networks and analog computation.

Original language	English
Article number	136228
Journal	Materials Letters
Volume	363
DOIs	https://doi.org/10.1016/j.matlet.2024.136228
State	Published - 15 May 2024

Keywords

Memristor
Nanosized
Particles
Quantum dots
Self-assembled
Semiconductors

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10.1016/j.matlet.2024.136228

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@article{2dc4050ade1e4dc286b1eed48308fb7f,

title = "Needle-like quantum dots effectively guide conductive filaments in hafnium-based memory devices",

abstract = "In this work, self-assembled needle-like quantum dots (CdSe-ZnS QDs) are used to enhance the local electric fields, and the formation/rupture of CFs happens at the QDs/HfOx interface, greatly reducing the randomness of CFs generation. The consistency has been significantly improved. SET voltage's coefficient of variation (δ/μ) decreased from 13.8\% to 6.7\%, while δ/μ of low resistive state (LRS) even became as low as 1.56\%. The QDs-HfOx device can realize multi-level conductance modulation and mimic the behavior of long-term potentiation (LTP) and long-term depression (LTD). Further, The MNIST handwritten recognition dataset achieved high recognition accuracies (93.96\%) for neuromorphic simulations. The device shows tremendous potential in neural networks and analog computation.",

keywords = "Memristor, Nanosized, Particles, Quantum dots, Self-assembled, Semiconductors",

author = "Na Bai and Lanqing Zou and Yuan, \{Jun Hui\} and Tao Wang and Li Li and Huajun Sun and Weiming Cheng and Xiaodong Tang and Hong Lu and Xiangshui Miao",

note = "Publisher Copyright: {\textcopyright} 2024 Elsevier B.V.",

year = "2024",

month = may,

day = "15",

doi = "10.1016/j.matlet.2024.136228",

language = "英语",

volume = "363",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Needle-like quantum dots effectively guide conductive filaments in hafnium-based memory devices

AU - Bai, Na

AU - Zou, Lanqing

AU - Yuan, Jun Hui

AU - Wang, Tao

AU - Li, Li

AU - Sun, Huajun

AU - Cheng, Weiming

AU - Tang, Xiaodong

AU - Lu, Hong

AU - Miao, Xiangshui

PY - 2024/5/15

Y1 - 2024/5/15

N2 - In this work, self-assembled needle-like quantum dots (CdSe-ZnS QDs) are used to enhance the local electric fields, and the formation/rupture of CFs happens at the QDs/HfOx interface, greatly reducing the randomness of CFs generation. The consistency has been significantly improved. SET voltage's coefficient of variation (δ/μ) decreased from 13.8% to 6.7%, while δ/μ of low resistive state (LRS) even became as low as 1.56%. The QDs-HfOx device can realize multi-level conductance modulation and mimic the behavior of long-term potentiation (LTP) and long-term depression (LTD). Further, The MNIST handwritten recognition dataset achieved high recognition accuracies (93.96%) for neuromorphic simulations. The device shows tremendous potential in neural networks and analog computation.

AB - In this work, self-assembled needle-like quantum dots (CdSe-ZnS QDs) are used to enhance the local electric fields, and the formation/rupture of CFs happens at the QDs/HfOx interface, greatly reducing the randomness of CFs generation. The consistency has been significantly improved. SET voltage's coefficient of variation (δ/μ) decreased from 13.8% to 6.7%, while δ/μ of low resistive state (LRS) even became as low as 1.56%. The QDs-HfOx device can realize multi-level conductance modulation and mimic the behavior of long-term potentiation (LTP) and long-term depression (LTD). Further, The MNIST handwritten recognition dataset achieved high recognition accuracies (93.96%) for neuromorphic simulations. The device shows tremendous potential in neural networks and analog computation.

KW - Memristor

KW - Nanosized

KW - Particles

KW - Quantum dots

KW - Self-assembled

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/85187654223

U2 - 10.1016/j.matlet.2024.136228

DO - 10.1016/j.matlet.2024.136228

M3 - 文章

AN - SCOPUS:85187654223

SN - 0167-577X

VL - 363

JO - Materials Letters

JF - Materials Letters

M1 - 136228

ER -

Needle-like quantum dots effectively guide conductive filaments in hafnium-based memory devices

Abstract

Keywords

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