TY - JOUR
T1 - Near-Infrared Photoresponse Driven by Strong Interlayer Transition in 2D MoSe2/WSe2 van der Waals Heterostructures
T2 - Implications for Broadband Photodetectors
AU - Hu, Rui
AU - Wang, Huiting
AU - Gao, Yanqing
AU - Li, Yafang
AU - Cao, Aiping
AU - Wang, Zixin
AU - Shang, Liyan
AU - Li, Yawei
AU - Jiang, Kai
AU - Zhang, Jinzhong
AU - Zhu, Liangqing
AU - Hu, Zhigao
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/12/27
Y1 - 2024/12/27
N2 - Bandgap engineering of transition metal dichalcogenides (TMDCs) opens up opportunities to design broadband photodetectors via interlayer transition in type-II van der Waals (vdWs) heterostructures. However, the photoresponse related to interlayer coupling remains elusive, because of the limited efficiency of interlayer electron-hole generation and separation. Herein, we report the near-infrared optoelectronic response driven by the interlayer transition in MoSe2/WSe2 bilayer-bilayer vdWs heterostructure grown by one-pot chemical vapor deposition (CVD). It is found that the interlayer distance of the MoSe2 bilayer and WSe2 bilayer approximately reaches a single atomic layer, which enhances the strength of interlayer coupling. A substantial build-in potential in MoSe2/WSe2 heterostructure leads to rapid separation of photogenerated carriers. Moreover, this MoSe2/WSe2 bilayer-bilayer heterostructure exhibits high optoelectronic performance from the visible to near-infrared spectrum, obtaining a near-infrared photoresponse time of 38 μs at 940 nm. Our work may provoke further exploration of interlayer transition in type-II TMDCs heterostructures and their applications in broadband photodetectors.
AB - Bandgap engineering of transition metal dichalcogenides (TMDCs) opens up opportunities to design broadband photodetectors via interlayer transition in type-II van der Waals (vdWs) heterostructures. However, the photoresponse related to interlayer coupling remains elusive, because of the limited efficiency of interlayer electron-hole generation and separation. Herein, we report the near-infrared optoelectronic response driven by the interlayer transition in MoSe2/WSe2 bilayer-bilayer vdWs heterostructure grown by one-pot chemical vapor deposition (CVD). It is found that the interlayer distance of the MoSe2 bilayer and WSe2 bilayer approximately reaches a single atomic layer, which enhances the strength of interlayer coupling. A substantial build-in potential in MoSe2/WSe2 heterostructure leads to rapid separation of photogenerated carriers. Moreover, this MoSe2/WSe2 bilayer-bilayer heterostructure exhibits high optoelectronic performance from the visible to near-infrared spectrum, obtaining a near-infrared photoresponse time of 38 μs at 940 nm. Our work may provoke further exploration of interlayer transition in type-II TMDCs heterostructures and their applications in broadband photodetectors.
KW - bandgap engineering
KW - interlayer transition
KW - near-infrared photodetection
KW - photoresponse time
KW - type-II van der Waals heterostructures
UR - https://www.scopus.com/pages/publications/85211466419
U2 - 10.1021/acsanm.4c06290
DO - 10.1021/acsanm.4c06290
M3 - 文章
AN - SCOPUS:85211466419
SN - 2574-0970
VL - 7
SP - 28798
EP - 28807
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
IS - 24
ER -