Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10ns) and Excellent Vth Stability

Qing Luo; Jie Yu; Xumeng Zhang; Kan Hao Xue; Jun Hui Yuan; Yan Cheng; Tiancheng Gong; Hangbing Lv; Xiaoxin Xu; Peng Yuan; Jiahao Yin; Lu Tai; Shibing Long; Qi Liu; Xiangshui Miao; Jing Li; Ming Liu

doi:10.23919/VLSIT.2019.8776546

Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability

Qing Luo
, Jie Yu
, Xumeng Zhang
, Kan Hao Xue
, Jun Hui Yuan
, Yan Cheng
, Tiancheng Gong
, Hangbing Lv
, Xiaoxin Xu
, Peng Yuan
, Jiahao Yin
, Lu Tai
, Shibing Long
, Qi Liu
, Xiangshui Miao
, Jing Li
, Ming Liu

School of Physics and Electronic Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

32 Scopus citations

Abstract

In this work, we demonstrate a high performance Nb_1-_xO₂ based selector with thermal feedback mechanism for 3D X-point application. Ultra-high endurance (> 10¹²), high operation speed (10ns), bidirectional operation and excellent V_th stability were achieved. By adding a barrier layer between Nb_1-xO₂ film and electrode, the off-state leakage current was reduced by one order of magnitude (selectivity as high as 500). This work provides a universal selector solution for various emerging memories, including RRAM, MRAM and PCM.

Original language	English
Title of host publication	2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	T236-T237
ISBN (Electronic)	9784863487178
DOIs	https://doi.org/10.23919/VLSIT.2019.8776546
State	Published - Jun 2019
Event	39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, Japan Duration: 9 Jun 2019 → 14 Jun 2019

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2019-June
ISSN (Print)	0743-1562

Conference

Conference	39th Symposium on VLSI Technology, VLSI Technology 2019
Country/Territory	Japan
City	Kyoto
Period	9/06/19 → 14/06/19

Access to Document

10.23919/VLSIT.2019.8776546

Cite this

Luo, Q., Yu, J., Zhang, X., Xue, K. H., Yuan, J. H., Cheng, Y., Gong, T., Lv, H., Xu, X., Yuan, P., Yin, J., Tai, L., Long, S., Liu, Q., Miao, X., Li, J., & Liu, M. (2019). Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability. In 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers (pp. T236-T237). Article 8776546 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIT.2019.8776546

Luo, Qing ; Yu, Jie ; Zhang, Xumeng et al. / Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability. 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. pp. T236-T237 (Digest of Technical Papers - Symposium on VLSI Technology).

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title = "Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10ns) and Excellent Vth Stability",

abstract = "In this work, we demonstrate a high performance Nb1-xO2 based selector with thermal feedback mechanism for 3D X-point application. Ultra-high endurance (> 1012), high operation speed (10ns), bidirectional operation and excellent Vth stability were achieved. By adding a barrier layer between Nb1-xO2 film and electrode, the off-state leakage current was reduced by one order of magnitude (selectivity as high as 500). This work provides a universal selector solution for various emerging memories, including RRAM, MRAM and PCM.",

author = "Qing Luo and Jie Yu and Xumeng Zhang and Xue, \{Kan Hao\} and Yuan, \{Jun Hui\} and Yan Cheng and Tiancheng Gong and Hangbing Lv and Xiaoxin Xu and Peng Yuan and Jiahao Yin and Lu Tai and Shibing Long and Qi Liu and Xiangshui Miao and Jing Li and Ming Liu",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.; 39th Symposium on VLSI Technology, VLSI Technology 2019 ; Conference date: 09-06-2019 Through 14-06-2019",

year = "2019",

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doi = "10.23919/VLSIT.2019.8776546",

language = "英语",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

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Luo, Q, Yu, J, Zhang, X, Xue, KH, Yuan, JH, Cheng, Y, Gong, T, Lv, H, Xu, X, Yuan, P, Yin, J, Tai, L, Long, S, Liu, Q, Miao, X, Li, J & Liu, M 2019, Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability. in 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers., 8776546, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. T236-T237, 39th Symposium on VLSI Technology, VLSI Technology 2019, Kyoto, Japan, 9/06/19. https://doi.org/10.23919/VLSIT.2019.8776546

Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability. / Luo, Qing; Yu, Jie; Zhang, Xumeng et al.
2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. p. T236-T237 8776546 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yu, Jie

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AU - Xue, Kan Hao

AU - Yuan, Jun Hui

AU - Cheng, Yan

AU - Gong, Tiancheng

AU - Lv, Hangbing

AU - Xu, Xiaoxin

AU - Yuan, Peng

AU - Yin, Jiahao

AU - Tai, Lu

AU - Long, Shibing

AU - Liu, Qi

AU - Miao, Xiangshui

AU - Li, Jing

AU - Liu, Ming

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AB - In this work, we demonstrate a high performance Nb1-xO2 based selector with thermal feedback mechanism for 3D X-point application. Ultra-high endurance (> 1012), high operation speed (10ns), bidirectional operation and excellent Vth stability were achieved. By adding a barrier layer between Nb1-xO2 film and electrode, the off-state leakage current was reduced by one order of magnitude (selectivity as high as 500). This work provides a universal selector solution for various emerging memories, including RRAM, MRAM and PCM.

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th Symposium on VLSI Technology, VLSI Technology 2019

Y2 - 9 June 2019 through 14 June 2019

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Luo Q, Yu J, Zhang X, Xue KH, Yuan JH, Cheng Y et al. Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability. In 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2019. p. T236-T237. 8776546. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSIT.2019.8776546