Nano-structure fabrication for HgCdTe ultra-fast infrared sensors

Shao Wei Wang; Jianrong Yang; Yifang Chen; Honglou Zhen; Xiaoshuang Chen; Wei Lu

doi:10.1088/1742-6596/188/1/012023

Nano-structure fabrication for HgCdTe ultra-fast infrared sensors

Shao Wei Wang^*
, Jianrong Yang
, Yifang Chen
, Honglou Zhen
, Xiaoshuang Chen
, Wei Lu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

High-speed infrared sensors are necessary for broad applications in optic fibre communications with high data capacity and high security and distance sensing by laser. In this paper, an ultra-fast infrared sensor with 100 nm ballistic channels has been proposed and successfully fabricated by electron beam lithography. The area of photosensitive surface is as large as 100 μm × 100 μm to ensure its high sensitivity. The principle is based on the ballistic transport of electrons in the nano-scale channels. The frequency is expected to be in the range of 10 GHz, one or two orders higher than conventional photovoltaic sensors.

Original language	English
Article number	012023
Journal	Journal of Physics: Conference Series
Volume	188
DOIs	https://doi.org/10.1088/1742-6596/188/1/012023
State	Published - 2009
Externally published	Yes

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@article{2d408106dc994982ae2038dea9fe3b4c,

title = "Nano-structure fabrication for HgCdTe ultra-fast infrared sensors",

abstract = "High-speed infrared sensors are necessary for broad applications in optic fibre communications with high data capacity and high security and distance sensing by laser. In this paper, an ultra-fast infrared sensor with 100 nm ballistic channels has been proposed and successfully fabricated by electron beam lithography. The area of photosensitive surface is as large as 100 μm × 100 μm to ensure its high sensitivity. The principle is based on the ballistic transport of electrons in the nano-scale channels. The frequency is expected to be in the range of 10 GHz, one or two orders higher than conventional photovoltaic sensors.",

author = "Wang, \{Shao Wei\} and Jianrong Yang and Yifang Chen and Honglou Zhen and Xiaoshuang Chen and Wei Lu",

year = "2009",

doi = "10.1088/1742-6596/188/1/012023",

language = "英语",

volume = "188",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

}

TY - JOUR

T1 - Nano-structure fabrication for HgCdTe ultra-fast infrared sensors

AU - Wang, Shao Wei

AU - Yang, Jianrong

AU - Chen, Yifang

AU - Zhen, Honglou

AU - Chen, Xiaoshuang

AU - Lu, Wei

PY - 2009

Y1 - 2009

N2 - High-speed infrared sensors are necessary for broad applications in optic fibre communications with high data capacity and high security and distance sensing by laser. In this paper, an ultra-fast infrared sensor with 100 nm ballistic channels has been proposed and successfully fabricated by electron beam lithography. The area of photosensitive surface is as large as 100 μm × 100 μm to ensure its high sensitivity. The principle is based on the ballistic transport of electrons in the nano-scale channels. The frequency is expected to be in the range of 10 GHz, one or two orders higher than conventional photovoltaic sensors.

AB - High-speed infrared sensors are necessary for broad applications in optic fibre communications with high data capacity and high security and distance sensing by laser. In this paper, an ultra-fast infrared sensor with 100 nm ballistic channels has been proposed and successfully fabricated by electron beam lithography. The area of photosensitive surface is as large as 100 μm × 100 μm to ensure its high sensitivity. The principle is based on the ballistic transport of electrons in the nano-scale channels. The frequency is expected to be in the range of 10 GHz, one or two orders higher than conventional photovoltaic sensors.

UR - https://www.scopus.com/pages/publications/73349142038

U2 - 10.1088/1742-6596/188/1/012023

DO - 10.1088/1742-6596/188/1/012023

M3 - 文章

AN - SCOPUS:73349142038

SN - 1742-6588

VL - 188

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

M1 - 012023

ER -

Nano-structure fabrication for HgCdTe ultra-fast infrared sensors

Abstract

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