N-doped Si 0.6Sb 2Te 3 material for applications of phase-change memory

Cheng Peng; Pingxiong Yang; Liangcai Wu; Zhitang Song; Feng Rao; Jianan Xu; Xilin Zhou; Min Zhu; Bo Liu; Junhao Chu

doi:10.1149/2.022204esl

N-doped Si _0.6Sb ₂Te ₃ material for applications of phase-change memory

Cheng Peng^*
, Pingxiong Yang
, Liangcai Wu
, Zhitang Song
, Feng Rao
, Jianan Xu
, Xilin Zhou
, Min Zhu
, Bo Liu
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Nitrogen incorporated Si _0.6Sb ₂Te ₃ film shows higher crystallization temperature (∼185C) than Ge ₂Sb ₂Te ₅ (∼150C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si _0.6Sb ₂Te ₃ material (SST-N). Nitrogen incorporated in Si _0.6Sb ₂Te ₃ material prefers to bind with Si atoms instead of Sb or Te atoms. Phase-change memory (PCM) cell based on SST-N shows faster reversible phase-change speed and lower SET and RESET threshold voltages than those of Ge ₂Sb ₂Te ₅ based cell. In addition, up to 10 ⁴ cycles of endurance for the SST-N based cell are observed. SST-N material is a promising candidate for high speed and low-power PCM applications.

Original language	English
Pages (from-to)	H101-H104
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	4
DOIs	https://doi.org/10.1149/2.022204esl
State	Published - 2012

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title = "N-doped Si 0.6Sb 2Te 3 material for applications of phase-change memory",

abstract = "Nitrogen incorporated Si 0.6Sb 2Te 3 film shows higher crystallization temperature (∼185C) than Ge 2Sb 2Te 5 (∼150C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si 0.6Sb 2Te 3 material (SST-N). Nitrogen incorporated in Si 0.6Sb 2Te 3 material prefers to bind with Si atoms instead of Sb or Te atoms. Phase-change memory (PCM) cell based on SST-N shows faster reversible phase-change speed and lower SET and RESET threshold voltages than those of Ge 2Sb 2Te 5 based cell. In addition, up to 10 4 cycles of endurance for the SST-N based cell are observed. SST-N material is a promising candidate for high speed and low-power PCM applications.",

author = "Cheng Peng and Pingxiong Yang and Liangcai Wu and Zhitang Song and Feng Rao and Jianan Xu and Xilin Zhou and Min Zhu and Bo Liu and Junhao Chu",

year = "2012",

doi = "10.1149/2.022204esl",

language = "英语",

volume = "15",

pages = "H101--H104",

journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - N-doped Si 0.6Sb 2Te 3 material for applications of phase-change memory

AU - Peng, Cheng

AU - Yang, Pingxiong

AU - Wu, Liangcai

AU - Song, Zhitang

AU - Rao, Feng

AU - Xu, Jianan

AU - Zhou, Xilin

AU - Zhu, Min

AU - Liu, Bo

AU - Chu, Junhao

PY - 2012

Y1 - 2012

N2 - Nitrogen incorporated Si 0.6Sb 2Te 3 film shows higher crystallization temperature (∼185C) than Ge 2Sb 2Te 5 (∼150C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si 0.6Sb 2Te 3 material (SST-N). Nitrogen incorporated in Si 0.6Sb 2Te 3 material prefers to bind with Si atoms instead of Sb or Te atoms. Phase-change memory (PCM) cell based on SST-N shows faster reversible phase-change speed and lower SET and RESET threshold voltages than those of Ge 2Sb 2Te 5 based cell. In addition, up to 10 4 cycles of endurance for the SST-N based cell are observed. SST-N material is a promising candidate for high speed and low-power PCM applications.

AB - Nitrogen incorporated Si 0.6Sb 2Te 3 film shows higher crystallization temperature (∼185C) than Ge 2Sb 2Te 5 (∼150C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si 0.6Sb 2Te 3 material (SST-N). Nitrogen incorporated in Si 0.6Sb 2Te 3 material prefers to bind with Si atoms instead of Sb or Te atoms. Phase-change memory (PCM) cell based on SST-N shows faster reversible phase-change speed and lower SET and RESET threshold voltages than those of Ge 2Sb 2Te 5 based cell. In addition, up to 10 4 cycles of endurance for the SST-N based cell are observed. SST-N material is a promising candidate for high speed and low-power PCM applications.

UR - https://www.scopus.com/pages/publications/84863159503

U2 - 10.1149/2.022204esl

DO - 10.1149/2.022204esl

M3 - 文章

AN - SCOPUS:84863159503

SN - 1099-0062

VL - 15

SP - H101-H104

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

N-doped Si _0.6Sb ₂Te ₃ material for applications of phase-change memory

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