Multiphonon ionization of traps formed in hafnium oxide by electrical stress

A. L. Danilyuk; D. B. Migas; M. A. Danilyuk; V. E. Borisenko; X. Wu; N. Raghavan; K. L. Pey

doi:10.1002/pssa.201228083

Multiphonon ionization of traps formed in hafnium oxide by electrical stress

A. L. Danilyuk^*
, D. B. Migas
, M. A. Danilyuk
, V. E. Borisenko
, X. Wu
, N. Raghavan
, K. L. Pey

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have investigated behavior of traps formed in hafnium oxide (HfO ₂) by electrical stress and their influence on the charge carrier transport through Si/SiO₂/HfO₂/poly-Si nanostructures. The traps govern the transport process assuming a capture of charge carriers followed by their ionization via the multiphonon transition mechanism. The multiphonon transitions via the Poole-Frenkel effect or electron tunneling as well as the multiphonon tunneling ionization of neutral traps have been carefully considered for charged traps. We also provide a set of parameters including the trap concentration, ionization energy, the frequency factor, the effective mass of charge carriers, optical energy, and phonon energy in order to reproduce and reasonably fit available experimental data.

Original language	English
Pages (from-to)	361-366
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	210
Issue number	2
DOIs	https://doi.org/10.1002/pssa.201228083
State	Published - Feb 2013
Externally published	Yes

Keywords

Poole-Frenkel effect
electrical stress
hafnium oxide
multiphonon ionization

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10.1002/pssa.201228083

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title = "Multiphonon ionization of traps formed in hafnium oxide by electrical stress",

abstract = "We have investigated behavior of traps formed in hafnium oxide (HfO 2) by electrical stress and their influence on the charge carrier transport through Si/SiO2/HfO2/poly-Si nanostructures. The traps govern the transport process assuming a capture of charge carriers followed by their ionization via the multiphonon transition mechanism. The multiphonon transitions via the Poole-Frenkel effect or electron tunneling as well as the multiphonon tunneling ionization of neutral traps have been carefully considered for charged traps. We also provide a set of parameters including the trap concentration, ionization energy, the frequency factor, the effective mass of charge carriers, optical energy, and phonon energy in order to reproduce and reasonably fit available experimental data.",

keywords = "Poole-Frenkel effect, electrical stress, hafnium oxide, multiphonon ionization",

author = "Danilyuk, \{A. L.\} and Migas, \{D. B.\} and Danilyuk, \{M. A.\} and Borisenko, \{V. E.\} and X. Wu and N. Raghavan and Pey, \{K. L.\}",

year = "2013",

month = feb,

doi = "10.1002/pssa.201228083",

language = "英语",

volume = "210",

pages = "361--366",

journal = "Physica Status Solidi (A) Applications and Materials Science",

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TY - JOUR

T1 - Multiphonon ionization of traps formed in hafnium oxide by electrical stress

AU - Danilyuk, A. L.

AU - Migas, D. B.

AU - Danilyuk, M. A.

AU - Borisenko, V. E.

AU - Wu, X.

AU - Raghavan, N.

AU - Pey, K. L.

PY - 2013/2

Y1 - 2013/2

N2 - We have investigated behavior of traps formed in hafnium oxide (HfO 2) by electrical stress and their influence on the charge carrier transport through Si/SiO2/HfO2/poly-Si nanostructures. The traps govern the transport process assuming a capture of charge carriers followed by their ionization via the multiphonon transition mechanism. The multiphonon transitions via the Poole-Frenkel effect or electron tunneling as well as the multiphonon tunneling ionization of neutral traps have been carefully considered for charged traps. We also provide a set of parameters including the trap concentration, ionization energy, the frequency factor, the effective mass of charge carriers, optical energy, and phonon energy in order to reproduce and reasonably fit available experimental data.

AB - We have investigated behavior of traps formed in hafnium oxide (HfO 2) by electrical stress and their influence on the charge carrier transport through Si/SiO2/HfO2/poly-Si nanostructures. The traps govern the transport process assuming a capture of charge carriers followed by their ionization via the multiphonon transition mechanism. The multiphonon transitions via the Poole-Frenkel effect or electron tunneling as well as the multiphonon tunneling ionization of neutral traps have been carefully considered for charged traps. We also provide a set of parameters including the trap concentration, ionization energy, the frequency factor, the effective mass of charge carriers, optical energy, and phonon energy in order to reproduce and reasonably fit available experimental data.

KW - Poole-Frenkel effect

KW - electrical stress

KW - hafnium oxide

KW - multiphonon ionization

UR - https://www.scopus.com/pages/publications/84874093256

U2 - 10.1002/pssa.201228083

DO - 10.1002/pssa.201228083

M3 - 文章

AN - SCOPUS:84874093256

SN - 1862-6300

VL - 210

SP - 361

EP - 366

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 2

ER -

Multiphonon ionization of traps formed in hafnium oxide by electrical stress

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Keywords

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