Multifunctional Lateral Transition-Metal Disulfides Heterojunctions

The intrinsic spin-dependent transport properties of two types of lateral VS₂|MoS₂ heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The lateral VS₂|MoS₂ heterojunction diodes show a perfect rectifying effect and are promising for the applications of Schottky diodes. A large spin-polarization ratio is observed for the A-type device and pure spin-mediated current is then realized. The gate voltage significantly tunes the current and rectification ratio of their field-effect transistors. In addition, they all demonstrate a sensitive photoresponse to blue light, and could be used as photodetector and photovoltaic device. Moreover, they generate an effective thermally driven current when a temperature gratitude appears between the two terminals, suggesting them as potential thermoelectric materials. Hence, the lateral VS₂|MoS₂ heterojunctions show a multifunctional nature and have various potential applications in spintronics, optoelectronics, and spin caloritronics.