TY - GEN
T1 - Multi-field modulation of exchange biased FeGa/IrMn bilayers grown on flexible polyvinylidene fluoride (PVDF) membranes
AU - Li, H.
AU - Zhan, Q.
AU - Rong, X.
AU - Liu, Y.
AU - Zhenghu, Z.
AU - Yang, H.
AU - Xiaoshan, Z.
AU - Wang, B.
AU - Mao, S.
AU - Li, R.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Exchange bias (EB) effect has been widely applied in magnetoelectronic devices such as magnetic tunneling junctions and spin valve sensors. Nowadays, the EB related flexible magnetic multilayers have found their application in wearable electronics, which are stretchable and bendable, and hence are closely strain related [1, 2]. Therefore, the investigation on the strain-mediated multi-field control of magnetism in the EB bilayers is of great significance for the development of flexible mag-netoelectronic devices [3]. In this study, we utilized flexible ferroelectric polyvinylidene fluoride (PVDF) membranes to improve the efficiency of strain transfer from substrate to EB heterostructure, and studied the thermal deformation and electric field control of the magnetic behaviors of FeGa/IrMn heterostructures.
AB - Exchange bias (EB) effect has been widely applied in magnetoelectronic devices such as magnetic tunneling junctions and spin valve sensors. Nowadays, the EB related flexible magnetic multilayers have found their application in wearable electronics, which are stretchable and bendable, and hence are closely strain related [1, 2]. Therefore, the investigation on the strain-mediated multi-field control of magnetism in the EB bilayers is of great significance for the development of flexible mag-netoelectronic devices [3]. In this study, we utilized flexible ferroelectric polyvinylidene fluoride (PVDF) membranes to improve the efficiency of strain transfer from substrate to EB heterostructure, and studied the thermal deformation and electric field control of the magnetic behaviors of FeGa/IrMn heterostructures.
UR - https://www.scopus.com/pages/publications/84942465532
U2 - 10.1109/INTMAG.2015.7156538
DO - 10.1109/INTMAG.2015.7156538
M3 - 会议稿件
AN - SCOPUS:84942465532
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -