Multi-Factor Modulated Organic Bulk Heterojunction Synaptic Transistor Enabled by Ligand Engineering for Centrosymmetric In-Sensor Computing

  • Enlong Li
  • , Xiumei Wang
  • , Xipeng Yu
  • , Rengjian Yu
  • , Wenwu Li*
  • , Tailiang Guo
  • , Junhao Chu
  • , Huipeng Chen*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Efficient in-sensor computing necessitates linear, bidirectional, and centrosymmetric photoresponse weight updates; however, the realization of these attributes poses a persistent challenge, with most photosensor devices achieving linear analog weight updates while falling short of accomplishing bidirectional and centrosymmetric characteristics. Here, the development of a quantum dot (QD)–based bulk heterojunction synaptic transistor (QBST) with multi-factor modulation through surface ligand engineering of blend QDs is reported. By controlling the charge transmission between QDs and the semiconductor, the QBST device enables tunable fading memory, which transforms linear weight updates in short-chain devices into linear, bidirectional, and unprecedented centrosymmetric optical synaptic responses in long-chain devices. Moreover, through the synergy of chemical and electric factors, the convolutional kernel of QBSTs-based convolutional neural network realizes enhanced recognition for complex noisy fashion-costume images, achieving an impressive 90.3% accuracy in the long-chain device, highlighting the efficiency of centrosymmetric weight updates. The results demonstrate that surface ligand engineering offers a promising approach for customizable synaptic modulation, facilitating energy- and time-efficient in-sensor computing.

Original languageEnglish
Article number2314980
JournalAdvanced Functional Materials
Volume34
Issue number26
DOIs
StatePublished - 26 Jun 2024
Externally publishedYes

Keywords

  • bulk heterojunction
  • in-sensor computing
  • multi-factor modulation
  • organic synaptic transistor
  • quantum dot ligand engineering

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