@inproceedings{1790eaca46404cb4828bfbfa0f65fef7,
title = "MOSFET C-V Characteristics Extraction Based on Ring Oscillator with Addressable DUTs",
abstract = "In this paper, a test structure of ring oscillator (RO) with addressable devices under test (DUTs) is described for the extracting of MOSFET capacitance-voltage (C-V) curves. With a high oscillation frequency, the influence of the gate-leakage current will be reduced to negligible. The addressable array and its calibration method in this work mitigate the impact from the layout, spatial and process variations, and improve the test accuracy. Moreover, the consumption of the layout area and test lines are also reduced by this structure.",
keywords = "Addressable DUTs, MOSFET C-V Curves, Ring Oscillator",
author = "Zhen Zhou and Junxu Wu and Wang, \{Chang Feng\} and Ganbing Shang and Xiaojin Li and Yabin Sun and Yanling Shi",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",
year = "2021",
month = apr,
day = "8",
doi = "10.1109/EDTM50988.2021.9420874",
language = "英语",
series = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
address = "美国",
}