@inproceedings{18b7b9326c6f490d9aaa3686bfbd3dfa,
title = "MOS capacitance properties of silicon-based PZT thin films",
abstract = "Ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) thin films were grown on silicon substrates by modified So1-Gel method using C4H6O4Pb•3H2O, ZrO(NO 3)2•2H2O and Ti(OC4H 9) as raw materials. PbTiO3 (PT) thin film was introduced as buffer layer. The microstructures of PZT thin films were characterized by XRD and SEM. Electrical properties such as C-V and leakage current characteristics of the films was investigated. The results show that PT buffer layer was helpful to improve the dielectric and ferroelectric properties of PZT thin films. PT buffer layer prevented the interface reaction and reduced the leakage current density of PZT/PT/Si structure about 10-2 compared with that of PZT/Si structure.",
keywords = "PT buffer layer, PZT thin film, Sol-Gel",
author = "Xiuhua Zhang and Meirong Shi and Sumei Qin and Ming Guo and Hongmei Deng and Pingxiong Yang",
year = "2008",
doi = "10.1117/12.792634",
language = "英语",
isbn = "9780819471826",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Sixth International Conference on Thin Film Physics and Applications",
note = "6th International Conference on Thin Film Physics and Applications, TFPA 2007 ; Conference date: 25-09-2007 Through 28-09-2007",
}