Morphology improvement of the Hg1-xCdxTe liquid-phase epilayers by meltback step

Jiqian Zhu; Junhao Chu; Biao Li; Xinqiang Chen; Juying Cao; Jijian Cheng

doi:10.1002/pssa.2211570111

Morphology improvement of the Hg_1-xCd_xTe liquid-phase epilayers by meltback step

Jiqian Zhu^*
, Junhao Chu
, Biao Li
, Xinqiang Chen
, Juying Cao
, Jijian Cheng

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics
East China University of Science and Technology
Shanghai Inst. of Building Materials

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Some factors affect the surface morphology of Hg_1-xCd_xTe epilayers grown from Te-rich solution by a vertical dipping liquid phase epitaxy technique. One is the substrate contamination which occurs during the homogenization of the source ingot. A protecting coverage on the substrate during the homogenization period, a melt-etched substrate with suitable undersaturation, and an epilayer meltback step at the end of LPE growth can help to improve the surface morphology and crystal quality of the Hg_1-xCd_xTe epilayers.

Original language	English
Pages (from-to)	83-91
Number of pages	9
Journal	Physica Status Solidi (A) Applied Research
Volume	157
Issue number	1
DOIs	https://doi.org/10.1002/pssa.2211570111
State	Published - Sep 1996
Externally published	Yes

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title = "Morphology improvement of the Hg1-xCdxTe liquid-phase epilayers by meltback step",

abstract = "Some factors affect the surface morphology of Hg1-xCdxTe epilayers grown from Te-rich solution by a vertical dipping liquid phase epitaxy technique. One is the substrate contamination which occurs during the homogenization of the source ingot. A protecting coverage on the substrate during the homogenization period, a melt-etched substrate with suitable undersaturation, and an epilayer meltback step at the end of LPE growth can help to improve the surface morphology and crystal quality of the Hg1-xCdxTe epilayers.",

author = "Jiqian Zhu and Junhao Chu and Biao Li and Xinqiang Chen and Juying Cao and Jijian Cheng",

year = "1996",

month = sep,

doi = "10.1002/pssa.2211570111",

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volume = "157",

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T1 - Morphology improvement of the Hg1-xCdxTe liquid-phase epilayers by meltback step

AU - Zhu, Jiqian

AU - Chu, Junhao

AU - Li, Biao

AU - Chen, Xinqiang

AU - Cao, Juying

AU - Cheng, Jijian

PY - 1996/9

Y1 - 1996/9

N2 - Some factors affect the surface morphology of Hg1-xCdxTe epilayers grown from Te-rich solution by a vertical dipping liquid phase epitaxy technique. One is the substrate contamination which occurs during the homogenization of the source ingot. A protecting coverage on the substrate during the homogenization period, a melt-etched substrate with suitable undersaturation, and an epilayer meltback step at the end of LPE growth can help to improve the surface morphology and crystal quality of the Hg1-xCdxTe epilayers.

AB - Some factors affect the surface morphology of Hg1-xCdxTe epilayers grown from Te-rich solution by a vertical dipping liquid phase epitaxy technique. One is the substrate contamination which occurs during the homogenization of the source ingot. A protecting coverage on the substrate during the homogenization period, a melt-etched substrate with suitable undersaturation, and an epilayer meltback step at the end of LPE growth can help to improve the surface morphology and crystal quality of the Hg1-xCdxTe epilayers.

UR - https://www.scopus.com/pages/publications/0030232839

U2 - 10.1002/pssa.2211570111

DO - 10.1002/pssa.2211570111

M3 - 文章

AN - SCOPUS:0030232839

SN - 0031-8965

VL - 157

SP - 83

EP - 91

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

ER -

Morphology improvement of the Hg_1-xCd_xTe liquid-phase epilayers by meltback step

Abstract

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