Monte Carlo simulation of MBE growth on GaAs vicinal surface

Huibing Mao; Wei Lu; Zhaohui Ma; Xingquan Liu; Xuechu Shen

Monte Carlo simulation of MBE growth on GaAs vicinal surface

Huibing Mao^*
, Wei Lu
, Zhaohui Ma
, Xingquan Liu
, Xuechu Shen

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, the MBE nucleation mode on vicinal GaAs(001) surface was simulated by Monte Carlo method. The results show that on A-surface the 2-D nucleation mode is dominant at 800-1000K, on B-surface the 2-D nucleation mode is dominant at low temperature, but at high temperature the step flow mode is dominant. Besides, there is saturation phenomenon at both high and low temperatures.

Original language	English
Pages (from-to)	1118-1122
Number of pages	5
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	43
Issue number	7
State	Published - Jul 1994
Externally published	Yes

Cite this

@article{fc27f0dec20844c79a32cd27817913c9,

title = "Monte Carlo simulation of MBE growth on GaAs vicinal surface",

abstract = "In this paper, the MBE nucleation mode on vicinal GaAs(001) surface was simulated by Monte Carlo method. The results show that on A-surface the 2-D nucleation mode is dominant at 800-1000K, on B-surface the 2-D nucleation mode is dominant at low temperature, but at high temperature the step flow mode is dominant. Besides, there is saturation phenomenon at both high and low temperatures.",

author = "Huibing Mao and Wei Lu and Zhaohui Ma and Xingquan Liu and Xuechu Shen",

year = "1994",

month = jul,

language = "英语",

volume = "43",

pages = "1118--1122",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "7",

}

TY - JOUR

T1 - Monte Carlo simulation of MBE growth on GaAs vicinal surface

AU - Mao, Huibing

AU - Lu, Wei

AU - Ma, Zhaohui

AU - Liu, Xingquan

AU - Shen, Xuechu

PY - 1994/7

Y1 - 1994/7

N2 - In this paper, the MBE nucleation mode on vicinal GaAs(001) surface was simulated by Monte Carlo method. The results show that on A-surface the 2-D nucleation mode is dominant at 800-1000K, on B-surface the 2-D nucleation mode is dominant at low temperature, but at high temperature the step flow mode is dominant. Besides, there is saturation phenomenon at both high and low temperatures.

AB - In this paper, the MBE nucleation mode on vicinal GaAs(001) surface was simulated by Monte Carlo method. The results show that on A-surface the 2-D nucleation mode is dominant at 800-1000K, on B-surface the 2-D nucleation mode is dominant at low temperature, but at high temperature the step flow mode is dominant. Besides, there is saturation phenomenon at both high and low temperatures.

UR - https://www.scopus.com/pages/publications/0028461436

M3 - 文章

AN - SCOPUS:0028461436

SN - 1000-3290

VL - 43

SP - 1118

EP - 1122

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 7

ER -

Monte Carlo simulation of MBE growth on GaAs vicinal surface

Abstract

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