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Molecular dynamics simulations of the crystal-melt interface mobility in HCP Mg and BCC Fe

  • East China Normal University
  • University of California at Berkeley
  • University of California at Davis
  • McMaster University

Research output: Contribution to journalArticlepeer-review

Abstract

The temperature profile around the moving solidliquid interface during non-equilibrium molecular dynamics (MD) simulations of crystallization and melting is examined for HCP Mg and BCC Fe. An evident spike (valley) is found around the solidliquid interface during solidification (melting). Considering the effect of a non-uniform temperature distribution, it is found that, if the actual interface temperature is adopted to compute the interface mobility, rather than the thermostat temperature (or the mean temperature of the whole system), the kinetic coefficient is approximately a factor of two larger than previous estimates. Although the magnitude of the kinetic coefficient is larger than the previous estimates, the crystalline anisotropies derived in the current work are consistent with earlier calculations.

Original languageEnglish
Pages (from-to)3238-3242
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number21
DOIs
StatePublished - 15 Oct 2010

Keywords

  • A1. Computer simulation
  • A1. Solidification
  • A1. Solidliquid interface
  • A2. Growth from melt

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