Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

L. He; S. L. Wang; J. R. Yang; M. F. Yu; Y. Wu; X. Q. Chen; W. Z. Fang; Y. M. Qiao; Yongsheng Gui; Junhao Chu

doi:10.1016/S0022-0248(98)01395-5

Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

L. He^*
, S. L. Wang
, J. R. Yang
, M. F. Yu
, Y. Wu
, X. Q. Chen
, W. Z. Fang
, Y. M. Qiao
, Yongsheng Gui
, Junhao Chu

^*Corresponding author for this work

S.

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

A novel approach of MBE in situ annealing of HgCdTe for the purposes of dislocation reduction and obtaining the required p-type electrical properties is described in the paper. To prevent surface re-evaporation during annealing in vacuum, double cap layers of CdTe and wide band gap material of ZnTe or ZnSe were grown on top of the HgCdTe, and their effects were studied. The surface EPD of HgCdTe grown on GaAs substrates was reduced to 2-4×10⁶ cm^-2 by vacuum annealing at 390-450 °C. The relation between the hole concentration and annealing temperature was obtained.

Original language	English
Pages (from-to)	524-529
Number of pages	6
Journal	Journal of Crystal Growth
Volume	201
DOIs	https://doi.org/10.1016/S0022-0248(98)01395-5
State	Published - May 1999
Externally published	Yes
Event	Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: 31 Aug 1998 → 4 Sep 1998

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10.1016/S0022-0248(98)01395-5

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title = "Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe",

abstract = "A novel approach of MBE in situ annealing of HgCdTe for the purposes of dislocation reduction and obtaining the required p-type electrical properties is described in the paper. To prevent surface re-evaporation during annealing in vacuum, double cap layers of CdTe and wide band gap material of ZnTe or ZnSe were grown on top of the HgCdTe, and their effects were studied. The surface EPD of HgCdTe grown on GaAs substrates was reduced to 2-4×106 cm-2 by vacuum annealing at 390-450 °C. The relation between the hole concentration and annealing temperature was obtained.",

author = "L. He and Wang, \{S. L.\} and Yang, \{J. R.\} and Yu, \{M. F.\} and Y. Wu and Chen, \{X. Q.\} and Fang, \{W. Z.\} and Qiao, \{Y. M.\} and Yongsheng Gui and Junhao Chu",

year = "1999",

month = may,

doi = "10.1016/S0022-0248(98)01395-5",

language = "英语",

volume = "201",

pages = "524--529",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

note = "Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) ; Conference date: 31-08-1998 Through 04-09-1998",

}

TY - JOUR

T1 - Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

AU - He, L.

AU - Wang, S. L.

AU - Yang, J. R.

AU - Yu, M. F.

AU - Wu, Y.

AU - Chen, X. Q.

AU - Fang, W. Z.

AU - Qiao, Y. M.

AU - Gui, Yongsheng

AU - Chu, Junhao

PY - 1999/5

Y1 - 1999/5

N2 - A novel approach of MBE in situ annealing of HgCdTe for the purposes of dislocation reduction and obtaining the required p-type electrical properties is described in the paper. To prevent surface re-evaporation during annealing in vacuum, double cap layers of CdTe and wide band gap material of ZnTe or ZnSe were grown on top of the HgCdTe, and their effects were studied. The surface EPD of HgCdTe grown on GaAs substrates was reduced to 2-4×106 cm-2 by vacuum annealing at 390-450 °C. The relation between the hole concentration and annealing temperature was obtained.

AB - A novel approach of MBE in situ annealing of HgCdTe for the purposes of dislocation reduction and obtaining the required p-type electrical properties is described in the paper. To prevent surface re-evaporation during annealing in vacuum, double cap layers of CdTe and wide band gap material of ZnTe or ZnSe were grown on top of the HgCdTe, and their effects were studied. The surface EPD of HgCdTe grown on GaAs substrates was reduced to 2-4×106 cm-2 by vacuum annealing at 390-450 °C. The relation between the hole concentration and annealing temperature was obtained.

UR - https://www.scopus.com/pages/publications/0032667304

U2 - 10.1016/S0022-0248(98)01395-5

DO - 10.1016/S0022-0248(98)01395-5

M3 - 会议文章

AN - SCOPUS:0032667304

SN - 0022-0248

VL - 201

SP - 524

EP - 529

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)

Y2 - 31 August 1998 through 4 September 1998

ER -

Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

Abstract

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