Modulation of magnetization direction in flexible multiferroic heterostructures towards flexible spintronics

  • Y. Liu
  • , Q. Zhan
  • , B. Wang
  • , S. Mao
  • , R. Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The discovery of giant magnetoresistance (GMR) opens the door of spintronics [1]. Recently, GMR and tunneling magnetoresistance (TMR) spintronic devices prepared on flexible substrates, so called flexible spintronics, have attracted a lot of interest due to the mechanical flexibility, light weight, and low cost compared with rigid materials [2]. Controlling the magnetization direction by tuning the magnetic anisotropy is the essential issue for the application of the flexible spintron-ics[3]. In this talk, flexible FeGa/PVDF multiferroic heterostructures were prepared by magnetron sputtering under different strain. PVDF can supply in-plane uniaxial strain by external strain, electric field, and the change of temperature, which is transferred to the FeGa layer to tune the magnetic anisotropy. Under assistance of small magnetic field, we can well control the magnetization direction in flexible FeGa/PVDF multiferroic heterostructures.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
StatePublished - 14 Jul 2015
Externally publishedYes
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: 11 May 201515 May 2015

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Conference

Conference2015 IEEE International Magnetics Conference, INTERMAG 2015
Country/TerritoryChina
CityBeijing
Period11/05/1515/05/15

Fingerprint

Dive into the research topics of 'Modulation of magnetization direction in flexible multiferroic heterostructures towards flexible spintronics'. Together they form a unique fingerprint.

Cite this