Modulated photoluminescence of shallow levels in arsenic-doped Hg _1-xCd_xTe (x≈0.3) grown by molecular beam epitaxy

Shallow levels in arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy have been investigated by temperature- and excitation power-dependent modulated photoluminescence spectroscopy. The ionization energies of the shallow levels of AsTe, AsHg, and the AsHg - VHg complex are preliminarily determined to be about 11.0, 8.5, and 33.5 meV, respectively. Correspondingly, the forming energy of the AsHg - VHg complex has been deduced to be approximately 10.5 meV. The results could be used as guidelines for the material growth or the fabrication of related devices.