Modulated photoluminescence of shallow levels in arsenic-doped Hg 1-xCdxTe (x≈0.3) grown by molecular beam epitaxy

Fangyu Yue; Junhao Chu; Jun Wu; Zhigao Hu; Yawei Li; Pingxiong Yang

doi:10.1063/1.2903499

Modulated photoluminescence of shallow levels in arsenic-doped Hg _1-xCd_xTe (x≈0.3) grown by molecular beam epitaxy

Fangyu Yue^*
, Junhao Chu
, Jun Wu
, Zhigao Hu
, Yawei Li
, Pingxiong Yang

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Shallow levels in arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy have been investigated by temperature- and excitation power-dependent modulated photoluminescence spectroscopy. The ionization energies of the shallow levels of AsTe, AsHg, and the AsHg - VHg complex are preliminarily determined to be about 11.0, 8.5, and 33.5 meV, respectively. Correspondingly, the forming energy of the AsHg - VHg complex has been deduced to be approximately 10.5 meV. The results could be used as guidelines for the material growth or the fabrication of related devices.

Original language	English
Article number	121916
Journal	Applied Physics Letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.2903499
State	Published - 2008

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title = "Modulated photoluminescence of shallow levels in arsenic-doped Hg 1-xCdxTe (x≈0.3) grown by molecular beam epitaxy",

abstract = "Shallow levels in arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy have been investigated by temperature- and excitation power-dependent modulated photoluminescence spectroscopy. The ionization energies of the shallow levels of AsTe, AsHg, and the AsHg - VHg complex are preliminarily determined to be about 11.0, 8.5, and 33.5 meV, respectively. Correspondingly, the forming energy of the AsHg - VHg complex has been deduced to be approximately 10.5 meV. The results could be used as guidelines for the material growth or the fabrication of related devices.",

author = "Fangyu Yue and Junhao Chu and Jun Wu and Zhigao Hu and Yawei Li and Pingxiong Yang",

year = "2008",

doi = "10.1063/1.2903499",

language = "英语",

volume = "92",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Modulated photoluminescence of shallow levels in arsenic-doped Hg 1-xCdxTe (x≈0.3) grown by molecular beam epitaxy

AU - Yue, Fangyu

AU - Chu, Junhao

AU - Wu, Jun

AU - Hu, Zhigao

AU - Li, Yawei

AU - Yang, Pingxiong

PY - 2008

Y1 - 2008

N2 - Shallow levels in arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy have been investigated by temperature- and excitation power-dependent modulated photoluminescence spectroscopy. The ionization energies of the shallow levels of AsTe, AsHg, and the AsHg - VHg complex are preliminarily determined to be about 11.0, 8.5, and 33.5 meV, respectively. Correspondingly, the forming energy of the AsHg - VHg complex has been deduced to be approximately 10.5 meV. The results could be used as guidelines for the material growth or the fabrication of related devices.

AB - Shallow levels in arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy have been investigated by temperature- and excitation power-dependent modulated photoluminescence spectroscopy. The ionization energies of the shallow levels of AsTe, AsHg, and the AsHg - VHg complex are preliminarily determined to be about 11.0, 8.5, and 33.5 meV, respectively. Correspondingly, the forming energy of the AsHg - VHg complex has been deduced to be approximately 10.5 meV. The results could be used as guidelines for the material growth or the fabrication of related devices.

UR - https://www.scopus.com/pages/publications/41349118970

U2 - 10.1063/1.2903499

DO - 10.1063/1.2903499

M3 - 文章

AN - SCOPUS:41349118970

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121916

ER -

Modulated photoluminescence of shallow levels in arsenic-doped Hg _1-xCd_xTe (x≈0.3) grown by molecular beam epitaxy

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