Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film

S. H. Hu; H. Y. Deng; Y. Sun; J. Wu; L. Y. Shang; T. Lin; R. Wang; N. Dai

doi:10.1016/j.jallcom.2007.10.106

Modified LPE technique growth and properties of long wavelength InAs_0.05Sb_0.95 thick film

S. H. Hu
, H. Y. Deng
, Y. Sun
, J. Wu
, L. Y. Shang
, T. Lin
, R. Wang
, N. Dai^*

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

InAs_0.05Sb_0.95 thick film with thickness of about 120 μm was grown by modified LPE technique on InAs substrate. The Fourier transform infrared (FTIR) transmission measurement revealed that the cutoff wavelength (defined at the mid-transmittance) is 12.5 μm for InAs_0.05Sb_0.95 thick film. An electron mobility of 23,900 cm²/V s with a carrier density of 2.37 × 10¹⁶ cm^-3 at 300 K has been achieved. The investigation of the lattice dynamics of InAs_0.05Sb_0.95 has been made by using Raman scattering. These results indicate its potential applications for infrared detectors in long wavelength range and high-speed electron devices.

Original language	English
Pages (from-to)	442-445
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	465
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2007.10.106
State	Published - 6 Oct 2008
Externally published	Yes

Keywords

Crystal growth
Optical properties
Semiconductors

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10.1016/j.jallcom.2007.10.106

Cite this

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title = "Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film",

abstract = "InAs0.05Sb0.95 thick film with thickness of about 120 μm was grown by modified LPE technique on InAs substrate. The Fourier transform infrared (FTIR) transmission measurement revealed that the cutoff wavelength (defined at the mid-transmittance) is 12.5 μm for InAs0.05Sb0.95 thick film. An electron mobility of 23,900 cm2/V s with a carrier density of 2.37 × 1016 cm-3 at 300 K has been achieved. The investigation of the lattice dynamics of InAs0.05Sb0.95 has been made by using Raman scattering. These results indicate its potential applications for infrared detectors in long wavelength range and high-speed electron devices.",

keywords = "Crystal growth, Optical properties, Semiconductors",

author = "Hu, \{S. H.\} and Deng, \{H. Y.\} and Y. Sun and J. Wu and Shang, \{L. Y.\} and T. Lin and R. Wang and N. Dai",

year = "2008",

month = oct,

day = "6",

doi = "10.1016/j.jallcom.2007.10.106",

language = "英语",

volume = "465",

pages = "442--445",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film

AU - Hu, S. H.

AU - Deng, H. Y.

AU - Sun, Y.

AU - Wu, J.

AU - Shang, L. Y.

AU - Lin, T.

AU - Wang, R.

AU - Dai, N.

PY - 2008/10/6

Y1 - 2008/10/6

N2 - InAs0.05Sb0.95 thick film with thickness of about 120 μm was grown by modified LPE technique on InAs substrate. The Fourier transform infrared (FTIR) transmission measurement revealed that the cutoff wavelength (defined at the mid-transmittance) is 12.5 μm for InAs0.05Sb0.95 thick film. An electron mobility of 23,900 cm2/V s with a carrier density of 2.37 × 1016 cm-3 at 300 K has been achieved. The investigation of the lattice dynamics of InAs0.05Sb0.95 has been made by using Raman scattering. These results indicate its potential applications for infrared detectors in long wavelength range and high-speed electron devices.

AB - InAs0.05Sb0.95 thick film with thickness of about 120 μm was grown by modified LPE technique on InAs substrate. The Fourier transform infrared (FTIR) transmission measurement revealed that the cutoff wavelength (defined at the mid-transmittance) is 12.5 μm for InAs0.05Sb0.95 thick film. An electron mobility of 23,900 cm2/V s with a carrier density of 2.37 × 1016 cm-3 at 300 K has been achieved. The investigation of the lattice dynamics of InAs0.05Sb0.95 has been made by using Raman scattering. These results indicate its potential applications for infrared detectors in long wavelength range and high-speed electron devices.

KW - Crystal growth

KW - Optical properties

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/50149089241

U2 - 10.1016/j.jallcom.2007.10.106

DO - 10.1016/j.jallcom.2007.10.106

M3 - 文章

AN - SCOPUS:50149089241

SN - 0925-8388

VL - 465

SP - 442

EP - 445

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Modified LPE technique growth and properties of long wavelength InAs_0.05Sb_0.95 thick film

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Keywords

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