Modeling of metal-semiconductor-metal photodetector for SPICE

Jianjun Gao; Baoxin Gao; Chunguang Liang

doi:10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W

Modeling of metal-semiconductor-metal photodetector for SPICE

Jianjun Gao^*
, Baoxin Gao
, Chunguang Liang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

An equivalent circuit model for a metal-semiconductor-metal (MSM) photodetector based on microwave port characteristics is presented for a SPICE simulator. The experiential formulas of dc characteristics and intrinsic capacitance-voltage characteristics are given. The model parameters are obtained from dc and C-V measurement data by using curve fitting. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on MSM PDs of different sizes.

Original language	English
Pages (from-to)	390-394
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	26
Issue number	6
DOIs	https://doi.org/10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W
State	Published - 20 Sep 2000
Externally published	Yes

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10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W

Cite this

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title = "Modeling of metal-semiconductor-metal photodetector for SPICE",

abstract = "An equivalent circuit model for a metal-semiconductor-metal (MSM) photodetector based on microwave port characteristics is presented for a SPICE simulator. The experiential formulas of dc characteristics and intrinsic capacitance-voltage characteristics are given. The model parameters are obtained from dc and C-V measurement data by using curve fitting. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on MSM PDs of different sizes.",

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AU - Gao, Baoxin

AU - Liang, Chunguang

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Y1 - 2000/9/20

N2 - An equivalent circuit model for a metal-semiconductor-metal (MSM) photodetector based on microwave port characteristics is presented for a SPICE simulator. The experiential formulas of dc characteristics and intrinsic capacitance-voltage characteristics are given. The model parameters are obtained from dc and C-V measurement data by using curve fitting. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on MSM PDs of different sizes.

AB - An equivalent circuit model for a metal-semiconductor-metal (MSM) photodetector based on microwave port characteristics is presented for a SPICE simulator. The experiential formulas of dc characteristics and intrinsic capacitance-voltage characteristics are given. The model parameters are obtained from dc and C-V measurement data by using curve fitting. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on MSM PDs of different sizes.

UR - https://www.scopus.com/pages/publications/0034272403

U2 - 10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W

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M3 - 文章

AN - SCOPUS:0034272403

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SP - 390

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JO - Microwave and Optical Technology Letters

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ER -

Modeling of metal-semiconductor-metal photodetector for SPICE

Abstract

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