Modeling and parameter extraction techniques of silicon-based radio frequency devices

  • Ao Zhang*
  • , Jianjun Gao
  • *Corresponding author for this work

Research output: Book/ReportBookpeer-review

1 Scopus citations

Abstract

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods. The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

Original languageEnglish
PublisherWorld Scientific Publishing Co. Pte Ltd
Number of pages305
ISBN (Electronic)9789811255366
ISBN (Print)9789811255359
DOIs
StatePublished - 21 Mar 2023

Fingerprint

Dive into the research topics of 'Modeling and parameter extraction techniques of silicon-based radio frequency devices'. Together they form a unique fingerprint.

Cite this