Model device parameters for a 10-Gb/s HEMT modulator driver IC

Gao Jianjun; Gao Baoxin; Pan Bo; Liang Chunguang

doi:10.1002/mop.10606

Model device parameters for a 10-Gb/s HEMT modulator driver IC

Gao Jianjun
, Gao Baoxin
, Pan Bo
, Liang Chunguang

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper presents research on device parameters for a 2.5-10-Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The results shown agree with experimental data.

Original language	English
Pages (from-to)	357-360
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	35
Issue number	5
DOIs	https://doi.org/10.1002/mop.10606
State	Published - 5 Dec 2002
Externally published	Yes

Keywords

Driver IC
HEMT device model parameters
High-speed optoelectronic integrated circuit
Optical transmitters

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10.1002/mop.10606

Cite this

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title = "Model device parameters for a 10-Gb/s HEMT modulator driver IC",

abstract = "This paper presents research on device parameters for a 2.5-10-Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The results shown agree with experimental data.",

keywords = "Driver IC, HEMT device model parameters, High-speed optoelectronic integrated circuit, Optical transmitters",

author = "Gao Jianjun and Gao Baoxin and Pan Bo and Liang Chunguang",

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AU - Jianjun, Gao

AU - Baoxin, Gao

AU - Bo, Pan

AU - Chunguang, Liang

PY - 2002/12/5

Y1 - 2002/12/5

N2 - This paper presents research on device parameters for a 2.5-10-Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The results shown agree with experimental data.

AB - This paper presents research on device parameters for a 2.5-10-Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The results shown agree with experimental data.

KW - Driver IC

KW - HEMT device model parameters

KW - High-speed optoelectronic integrated circuit

KW - Optical transmitters

UR - https://www.scopus.com/pages/publications/0037027940

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DO - 10.1002/mop.10606

M3 - 文章

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SN - 0895-2477

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EP - 360

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 5

ER -

Model device parameters for a 10-Gb/s HEMT modulator driver IC

Abstract

Keywords

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