Abstract
The concentrations and mobilities of bulk electron, bulk hole and interface electron were obtained, respectively, by the mobility specrum analysis (MSA) for n-type HgCdTe film grown by MBE and LPE techniques. The changes of concentration and mobility for bulk and interface electrons versus temperature were also derived from the MSA, which agree well with the theoretical analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 332 |
| Number of pages | 1 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 17 |
| Issue number | 5 |
| State | Published - 1998 |
| Externally published | Yes |
Keywords
- Hgcdte
- Mobility spectrum
- Multi-carrier system