Abstract
The preparation of Zn2SiO4: Mn2+ nanowire bundles in a furnace with a horizontal quartz tube, was investigated. The single-crystalline micro/nanowires were directly grown on Si(100) substrates at a low temperature of 700°C. The observations from energy dispersive X-ray spectroscopy (EDS) indicate that both the head part and the end part of the nanowires have approximately the same atomic ratio. The results show that 1D micro/nanoscale materials have potential applications in fluorescent and electroluminescent devices coupled with silicon-based integrated technology.
| Original language | English |
|---|---|
| Pages (from-to) | 257-260 |
| Number of pages | 4 |
| Journal | Small |
| Volume | 2 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 2006 |
| Externally published | Yes |
Keywords
- Doping
- Luminescence
- Nanowires
- Silicates
- Silicon wafers