Miniaturized Reconfigurable WO_3–x/WSe₂-Based 2D Radio-Frequency Switches with Integrated Attenuator and Phase Shifter for Next-Gen Communication

Integrating 2D materials into radio-frequency (RF) passive devices offer precise signal modulation, size reduction, and energy efficiency, fulfilling the crucial need for ultrafast, low-power, and scalable components in upcoming communication technologies. Here, an ultrafast 2D (Formula presented.) /WSe₂ RF switch, showing stable bipolar resistive switching (3.2 ns, 3.7 nJ) with exceptional RF performance with low insertion loss (<0.7 dB), high isolation (>30 dB), and high cutoff frequency (25.2 THz) up to 67 GHz, is presented. The switching mechanism is investigated to filling a critical gap in the understanding of 2D RF switch. To cater the growing RF systems complexities, different multi-port RF switches (2 × 2 matrices, single-pole-double-throw (SPDT), and double-pole-double-throw (DPDT) cross configurations) are pioneered and proposed, and miniature reconfigurable attenuators with 11 discrete states (3–33 dB, DC-34 GHz) and a phase shifter offering six phase steps (0° - 120°, DC-46 GHz) are innovatively introduced. This research contributes to advancing the understanding of 2D RF devices and provides valuable insights for the development of next-generation RF communication.