Microwave nonlinear device modelling by using an artificial neural network

Xiuping Li, Jianjun Gao, Georg Boeck

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

An approach for the microwave nonlinear device modelling technique based on a combination of the conventional equivalent circuit model and artificial neural network (ANN) is presented in this paper. The main advantage of the proposed method is that the integration and differential of an ANN can directly be carried out from the original ANN. The proposed technique is very useful for neural-based microwave computer-aided design, and for analytically unified dc, small signal and nonlinear device modelling. Examples of the Schottky diode and PHEMT linear/nonlinear modelling utilizing the proposed integration and differential technique are demonstrated.

Original languageEnglish
Article number001
Pages (from-to)833-840
Number of pages8
JournalSemiconductor Science and Technology
Volume21
Issue number7
DOIs
StatePublished - 1 Jul 2006
Externally publishedYes

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