Microwave noise modeling for PHEMT using artificial neural network technique

Jianjun Gao; Xiuping Li; Qi Jun Zhang

doi:10.1109/APMC.2006.4429405

Microwave noise modeling for PHEMT using artificial neural network technique

Jianjun Gao, Xiuping Li, Qi Jun Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

An improved noise model for pseudomorphic high electron mobility transistors (PHEMT) based on the conventional equivalent circuit modeling and artificial neural network (ANN) modeling technique is presented. The frequency dispersion of the noise model parameters which including noise parameters (P,R, imaginary and real parts of C) have taken into account by using an ANN model. The noise model parameters are determined directly from noise parameters on wafer measurement based on the noise correlation matrix technique. Good agreement is obtained between the measured and calculated results up to 26GHz for 2 × 40um gate width (number of gate fingers × unit gate width) 0.25μm Double Heterojunction 6-doped PHEMTs over a wide range of bias points.

Original language	English
Title of host publication	2006 Asia-Pacific Microwave Conference Proceedings, APMC
Pages	185-188
Number of pages	4
DOIs	https://doi.org/10.1109/APMC.2006.4429405
State	Published - 2006
Externally published	Yes
Event	2006 Asia-Pacific Microwave Conference, APMC - Yokohama, Japan Duration: 12 Dec 2006 → 15 Dec 2006

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	1

Conference

Conference	2006 Asia-Pacific Microwave Conference, APMC
Country/Territory	Japan
City	Yokohama
Period	12/12/06 → 15/12/06

Keywords

Correlation matrix
Neural network
Noise modeling
PHEMT

Access to Document

10.1109/APMC.2006.4429405

Cite this

@inproceedings{b85c7b7e51d84756aa4e133b12949522,

title = "Microwave noise modeling for PHEMT using artificial neural network technique",

abstract = "An improved noise model for pseudomorphic high electron mobility transistors (PHEMT) based on the conventional equivalent circuit modeling and artificial neural network (ANN) modeling technique is presented. The frequency dispersion of the noise model parameters which including noise parameters (P,R, imaginary and real parts of C) have taken into account by using an ANN model. The noise model parameters are determined directly from noise parameters on wafer measurement based on the noise correlation matrix technique. Good agreement is obtained between the measured and calculated results up to 26GHz for 2 × 40um gate width (number of gate fingers × unit gate width) 0.25μm Double Heterojunction 6-doped PHEMTs over a wide range of bias points.",

keywords = "Correlation matrix, Neural network, Noise modeling, PHEMT",

author = "Jianjun Gao and Xiuping Li and Zhang, \{Qi Jun\}",

year = "2006",

doi = "10.1109/APMC.2006.4429405",

language = "英语",

isbn = "4902339080",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

pages = "185--188",

booktitle = "2006 Asia-Pacific Microwave Conference Proceedings, APMC",

note = "2006 Asia-Pacific Microwave Conference, APMC ; Conference date: 12-12-2006 Through 15-12-2006",

}

Microwave noise modeling for PHEMT using artificial neural network technique. / Gao, Jianjun; Li, Xiuping; Zhang, Qi Jun.
2006 Asia-Pacific Microwave Conference Proceedings, APMC. 2006. p. 185-188 4429405 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Microwave noise modeling for PHEMT using artificial neural network technique

AU - Gao, Jianjun

AU - Li, Xiuping

AU - Zhang, Qi Jun

PY - 2006

Y1 - 2006

N2 - An improved noise model for pseudomorphic high electron mobility transistors (PHEMT) based on the conventional equivalent circuit modeling and artificial neural network (ANN) modeling technique is presented. The frequency dispersion of the noise model parameters which including noise parameters (P,R, imaginary and real parts of C) have taken into account by using an ANN model. The noise model parameters are determined directly from noise parameters on wafer measurement based on the noise correlation matrix technique. Good agreement is obtained between the measured and calculated results up to 26GHz for 2 × 40um gate width (number of gate fingers × unit gate width) 0.25μm Double Heterojunction 6-doped PHEMTs over a wide range of bias points.

AB - An improved noise model for pseudomorphic high electron mobility transistors (PHEMT) based on the conventional equivalent circuit modeling and artificial neural network (ANN) modeling technique is presented. The frequency dispersion of the noise model parameters which including noise parameters (P,R, imaginary and real parts of C) have taken into account by using an ANN model. The noise model parameters are determined directly from noise parameters on wafer measurement based on the noise correlation matrix technique. Good agreement is obtained between the measured and calculated results up to 26GHz for 2 × 40um gate width (number of gate fingers × unit gate width) 0.25μm Double Heterojunction 6-doped PHEMTs over a wide range of bias points.

KW - Correlation matrix

KW - Neural network

KW - Noise modeling

KW - PHEMT

UR - https://www.scopus.com/pages/publications/44849134930

U2 - 10.1109/APMC.2006.4429405

DO - 10.1109/APMC.2006.4429405

M3 - 会议稿件

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SN - 4902339080

SN - 9784902339086

T3 - Asia-Pacific Microwave Conference Proceedings, APMC

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BT - 2006 Asia-Pacific Microwave Conference Proceedings, APMC

T2 - 2006 Asia-Pacific Microwave Conference, APMC

Y2 - 12 December 2006 through 15 December 2006

ER -

Microwave noise modeling for PHEMT using artificial neural network technique

Abstract

Publication series

Conference

Keywords

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