Microwave noise modeling for PHEMT using artificial neural network technique

An improved noise model for pseudomorphic high electron mobility transistors (PHEMT) based on the combination of the artificial neural network (ANN) and conventional equivalent circuit modeling technique is presented. The frequency dispersion of the gate noise model parameter P, drain noise model parameter R, and the correlation coefficient C have been taken into account by using an ANN model. The influence of the gate leakage current can be accommodated by using the proposed noise model. The noise model parameters are determined directly from on wafer noise parameters measurement based on the noise correlation matrix technique. Good prediction for noise parameters and significant improvements of the accuracy of noise parameters are obtained up to 26 GHz for 2 × 40 lm gate width (number of gate fingers × unit gate width) 0.25 lm Double Heterojunction δ-doped PHEMTs over a wide range of bias points.