Microwave noise modeling for MOSFETs

Panpan Yu; Bo Chen; Jianjun Gao

doi:10.1002/jnm.2061

Microwave noise modeling for MOSFETs

Panpan Yu
, Bo Chen
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Analytical expressions for the noise parameters of radio frequency metal oxide semiconductor field effect transistors (MOSFETs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent circuit model, which takes into account the substrate parasitics and series inductances. Further, simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 14 GHz for 0.35 μm MOSFET over a wide range of bias points.

Original language	English
Pages (from-to)	639-648
Number of pages	10
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	28
Issue number	6
DOIs	https://doi.org/10.1002/jnm.2061
State	Published - 1 Nov 2015

Keywords

MOSFET
equivalent circuit
noise model

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10.1002/jnm.2061

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title = "Microwave noise modeling for MOSFETs",

abstract = "Analytical expressions for the noise parameters of radio frequency metal oxide semiconductor field effect transistors (MOSFETs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent circuit model, which takes into account the substrate parasitics and series inductances. Further, simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 14 GHz for 0.35 μm MOSFET over a wide range of bias points.",

keywords = "MOSFET, equivalent circuit, noise model",

author = "Panpan Yu and Bo Chen and Jianjun Gao",

note = "Publisher Copyright: Copyright {\textcopyright} 2015 John Wiley \& Sons, Ltd. Copyright {\textcopyright} 2015 John Wiley \& Sons, Ltd.",

year = "2015",

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doi = "10.1002/jnm.2061",

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T1 - Microwave noise modeling for MOSFETs

AU - Yu, Panpan

AU - Chen, Bo

AU - Gao, Jianjun

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Analytical expressions for the noise parameters of radio frequency metal oxide semiconductor field effect transistors (MOSFETs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent circuit model, which takes into account the substrate parasitics and series inductances. Further, simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 14 GHz for 0.35 μm MOSFET over a wide range of bias points.

AB - Analytical expressions for the noise parameters of radio frequency metal oxide semiconductor field effect transistors (MOSFETs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent circuit model, which takes into account the substrate parasitics and series inductances. Further, simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 14 GHz for 0.35 μm MOSFET over a wide range of bias points.

KW - MOSFET

KW - equivalent circuit

KW - noise model

UR - https://www.scopus.com/pages/publications/84943737535

U2 - 10.1002/jnm.2061

DO - 10.1002/jnm.2061

M3 - 文章

AN - SCOPUS:84943737535

SN - 0894-3370

VL - 28

SP - 639

EP - 648

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 6

ER -

Microwave noise modeling for MOSFETs

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Keywords

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