Microwave noise modeling for InP-InGaAs HBTs

Jianjun Gao; Xiuping Li; Hong Wang; Georg Boeck

doi:10.1109/TMTT.2004.825730

Microwave noise modeling for InP-InGaAs HBTs

Jianjun Gao^*
, Xiuping Li
, Hong Wang
, Georg Boeck

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5 × 5 μm ² emitter area over a wide range of bias points.

Original language	English
Pages (from-to)	1264-1272
Number of pages	9
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	52
Issue number	4
DOIs	https://doi.org/10.1109/TMTT.2004.825730
State	Published - Apr 2004
Externally published	Yes

Keywords

Heterojunction bipolar transistor (HBT)
Noise modeling
Parameter extraction

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10.1109/TMTT.2004.825730

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title = "Microwave noise modeling for InP-InGaAs HBTs",

abstract = "Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5 × 5 μm 2 emitter area over a wide range of bias points.",

keywords = "Heterojunction bipolar transistor (HBT), Noise modeling, Parameter extraction",

author = "Jianjun Gao and Xiuping Li and Hong Wang and Georg Boeck",

year = "2004",

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doi = "10.1109/TMTT.2004.825730",

language = "英语",

volume = "52",

pages = "1264--1272",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

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TY - JOUR

T1 - Microwave noise modeling for InP-InGaAs HBTs

AU - Gao, Jianjun

AU - Li, Xiuping

AU - Wang, Hong

AU - Boeck, Georg

PY - 2004/4

Y1 - 2004/4

N2 - Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5 × 5 μm 2 emitter area over a wide range of bias points.

AB - Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5 × 5 μm 2 emitter area over a wide range of bias points.

KW - Heterojunction bipolar transistor (HBT)

KW - Noise modeling

KW - Parameter extraction

UR - https://www.scopus.com/pages/publications/2442466814

U2 - 10.1109/TMTT.2004.825730

DO - 10.1109/TMTT.2004.825730

M3 - 文章

AN - SCOPUS:2442466814

SN - 0018-9480

VL - 52

SP - 1264

EP - 1272

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 4

ER -

Microwave noise modeling for InP-InGaAs HBTs

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Keywords

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