Microwave modeling and parameter extraction method for PHEMT

Jianjun Gao, Xiuping Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper reviews the characterization technique of pseudomorphic high electron mobility transistors (PHEMT). The linear, nonlinear and noise modeling and corresponding parameter extraction methods are described. The on wafer measurement methods for S parameters and noise parameters are also highlighted.

Original languageEnglish
Title of host publication2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
Pages1323-1326
Number of pages4
DOIs
StatePublished - 2008
Event2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT - Nanjing, China
Duration: 21 Apr 200824 Apr 2008

Publication series

Name2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
Volume3

Conference

Conference2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT
Country/TerritoryChina
CityNanjing
Period21/04/0824/04/08

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