Abstract
A new equivalent circuit model for 3D multilayer on-chip inductors based on physical principles is presented in this article. The model consists of multiple elementary cells, and every cell in the distributed model represents a single stacked inductor. The model also takes into account the distributed effect of the via-hole with feedline which is used to connect the test pad to the lowest mental layer. A parameter-extraction approach for proposed model which combines the analytical approach and empirical optimization procedure is investigated. Good agreement is obtained between simulated and measured results for a six metal layers on-chip inductor on silicon in the frequency range of 50 MHz to 20 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 343-348 |
| Number of pages | 6 |
| Journal | International Journal of RF and Microwave Computer-Aided Engineering |
| Volume | 23 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 2013 |
Keywords
- inductor model
- on-chip
- parameter extraction
- silicon