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Microwave-enhanced dephasing time in a HgCdTe film

  • L. M. Wei
  • , K. H. Gao
  • , X. Z. Liu
  • , G. Yu*
  • , Q. W. Wang
  • , T. Lin
  • , S. L. Guo
  • , Y. F. Wei
  • , J. R. Yang
  • , L. He
  • , N. Dai
  • , J. H. Chu
  • , D. G. Austing
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Technical Physics
  • University of Science and Technology of China
  • East China Normal University
  • National Research Council of Canada

Research output: Contribution to journalArticlepeer-review

Abstract

The antilocalization effect in a compensated HgCdTe film is observed. With an applied microwave field, both the zero-magnetic-field conductance and the dephasing time are enhanced nonlinearly with microwave power. The observation concerning the dephasing time is inconsistent with a heating mechanism. Such behavior is also in contrast to the microwave-induced suppression of weak-antilocalization and dephasing time seen for a two-dimensional electron gas of the anodic-oxidized HgCdTe. The nonlinear increase in zero-magnetic-field conductance is consistent with a microwave-assisted-hopping mechanism. The increased dephasing time can be explained qualitatively by the microwave-assisted-hopping mechanism and a microwave-induced increase in the electron density.

Original languageEnglish
Article number012108
JournalApplied Physics Letters
Volume102
Issue number1
DOIs
StatePublished - 7 Jan 2013

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