Microwave-enhanced dephasing time in a HgCdTe film

L. M. Wei; K. H. Gao; X. Z. Liu; G. Yu; Q. W. Wang; T. Lin; S. L. Guo; Y. F. Wei; J. R. Yang; L. He; N. Dai; J. H. Chu; D. G. Austing

doi:10.1063/1.4773178

Microwave-enhanced dephasing time in a HgCdTe film

L. M. Wei, K. H. Gao, X. Z. Liu, G. Yu, Q. W. Wang, T. Lin, S. L. Guo, Y. F. Wei, J. R. Yang, L. He, N. Dai, J. H. Chu, D. G. Austing

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The antilocalization effect in a compensated HgCdTe film is observed. With an applied microwave field, both the zero-magnetic-field conductance and the dephasing time are enhanced nonlinearly with microwave power. The observation concerning the dephasing time is inconsistent with a heating mechanism. Such behavior is also in contrast to the microwave-induced suppression of weak-antilocalization and dephasing time seen for a two-dimensional electron gas of the anodic-oxidized HgCdTe. The nonlinear increase in zero-magnetic-field conductance is consistent with a microwave-assisted-hopping mechanism. The increased dephasing time can be explained qualitatively by the microwave-assisted-hopping mechanism and a microwave-induced increase in the electron density.

Original language	English
Article number	012108
Journal	Applied Physics Letters
Volume	102
Issue number	1
DOIs	https://doi.org/10.1063/1.4773178
State	Published - 7 Jan 2013

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title = "Microwave-enhanced dephasing time in a HgCdTe film",

abstract = "The antilocalization effect in a compensated HgCdTe film is observed. With an applied microwave field, both the zero-magnetic-field conductance and the dephasing time are enhanced nonlinearly with microwave power. The observation concerning the dephasing time is inconsistent with a heating mechanism. Such behavior is also in contrast to the microwave-induced suppression of weak-antilocalization and dephasing time seen for a two-dimensional electron gas of the anodic-oxidized HgCdTe. The nonlinear increase in zero-magnetic-field conductance is consistent with a microwave-assisted-hopping mechanism. The increased dephasing time can be explained qualitatively by the microwave-assisted-hopping mechanism and a microwave-induced increase in the electron density.",

author = "Wei, \{L. M.\} and Gao, \{K. H.\} and Liu, \{X. Z.\} and G. Yu and Wang, \{Q. W.\} and T. Lin and Guo, \{S. L.\} and Wei, \{Y. F.\} and Yang, \{J. R.\} and L. He and N. Dai and Chu, \{J. H.\} and Austing, \{D. G.\}",

year = "2013",

month = jan,

day = "7",

doi = "10.1063/1.4773178",

language = "英语",

volume = "102",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Microwave-enhanced dephasing time in a HgCdTe film

AU - Wei, L. M.

AU - Gao, K. H.

AU - Liu, X. Z.

AU - Yu, G.

AU - Wang, Q. W.

AU - Lin, T.

AU - Guo, S. L.

AU - Wei, Y. F.

AU - Yang, J. R.

AU - He, L.

AU - Dai, N.

AU - Chu, J. H.

AU - Austing, D. G.

PY - 2013/1/7

Y1 - 2013/1/7

N2 - The antilocalization effect in a compensated HgCdTe film is observed. With an applied microwave field, both the zero-magnetic-field conductance and the dephasing time are enhanced nonlinearly with microwave power. The observation concerning the dephasing time is inconsistent with a heating mechanism. Such behavior is also in contrast to the microwave-induced suppression of weak-antilocalization and dephasing time seen for a two-dimensional electron gas of the anodic-oxidized HgCdTe. The nonlinear increase in zero-magnetic-field conductance is consistent with a microwave-assisted-hopping mechanism. The increased dephasing time can be explained qualitatively by the microwave-assisted-hopping mechanism and a microwave-induced increase in the electron density.

AB - The antilocalization effect in a compensated HgCdTe film is observed. With an applied microwave field, both the zero-magnetic-field conductance and the dephasing time are enhanced nonlinearly with microwave power. The observation concerning the dephasing time is inconsistent with a heating mechanism. Such behavior is also in contrast to the microwave-induced suppression of weak-antilocalization and dephasing time seen for a two-dimensional electron gas of the anodic-oxidized HgCdTe. The nonlinear increase in zero-magnetic-field conductance is consistent with a microwave-assisted-hopping mechanism. The increased dephasing time can be explained qualitatively by the microwave-assisted-hopping mechanism and a microwave-induced increase in the electron density.

UR - https://www.scopus.com/pages/publications/84872360861

U2 - 10.1063/1.4773178

DO - 10.1063/1.4773178

M3 - 文章

AN - SCOPUS:84872360861

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012108

ER -

Microwave-enhanced dephasing time in a HgCdTe film

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