Abstract
The BixFeO3 thin films were grown on both Si and LaNiO3-coated Si substrates via sol-gel technique. The x-ray diffraction patterns were used to check the preliminary structures and crystallinities. The P-E curves which suggests the electrical characterizations of the films were analyzed. Furthermore, Raman spectra were also exploited to evaluate their optical properties.
| Original language | English |
|---|---|
| Article number | 012174 |
| Journal | Journal of Physics: Conference Series |
| Volume | 276 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2011 |
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