Microstructure of SiOx:H films prepared by plasma enhanced chemical vapor deposition

Zhi Xun Ma; Xian Bo Liao; Guang Lin Kong; Jun Hao Chu

doi:10.1088/1009-1963/9/4/011

Microstructure of SiO_x:H films prepared by plasma enhanced chemical vapor deposition

Zhi Xun Ma^*
, Xian Bo Liao
, Guang Lin Kong
, Jun Hao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiO_x:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiO_x:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO₂ and HSi-O₃. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

Original language	English
Pages (from-to)	309-312
Number of pages	4
Journal	Chinese Physics (Overseas Edition)
Volume	9
Issue number	4
DOIs	https://doi.org/10.1088/1009-1963/9/4/011
State	Published - Apr 2000
Externally published	Yes

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title = "Microstructure of SiOx:H films prepared by plasma enhanced chemical vapor deposition",

abstract = "The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.",

author = "Ma, \{Zhi Xun\} and Liao, \{Xian Bo\} and Kong, \{Guang Lin\} and Chu, \{Jun Hao\}",

year = "2000",

month = apr,

doi = "10.1088/1009-1963/9/4/011",

language = "英语",

volume = "9",

pages = "309--312",

journal = "Chinese Physics (Overseas Edition)",

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TY - JOUR

T1 - Microstructure of SiOx:H films prepared by plasma enhanced chemical vapor deposition

AU - Ma, Zhi Xun

AU - Liao, Xian Bo

AU - Kong, Guang Lin

AU - Chu, Jun Hao

PY - 2000/4

Y1 - 2000/4

N2 - The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

AB - The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

UR - https://www.scopus.com/pages/publications/0034165576

U2 - 10.1088/1009-1963/9/4/011

DO - 10.1088/1009-1963/9/4/011

M3 - 文章

AN - SCOPUS:0034165576

SN - 1009-1963

VL - 9

SP - 309

EP - 312

JO - Chinese Physics (Overseas Edition)

JF - Chinese Physics (Overseas Edition)

IS - 4

ER -

Microstructure of SiO_x:H films prepared by plasma enhanced chemical vapor deposition

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