TY - GEN
T1 - Microstructure evolution of the phase change material TiSbTe
AU - Chen, Yongjin
AU - Zhang, Bin
AU - Ding, Qingqing
AU - Deng, Qingsong
AU - Cheng, Yan
AU - Song, Zhitang
AU - Li, Jixue
AU - Zhang, Ze
AU - Han, Xiaodong
N1 - Publisher Copyright:
© 2016 SPIE.
PY - 2016
Y1 - 2016
N2 - The crystallization process and crystal structure of the phase change material TiSbTe alloy have been successfully established, which is essential for applying this alloy in phase change memory. Specifically, transmission electron microscopy (TEM) analyses of the film annealed in situ were used in combination with selected-area electron diffraction (SAED) and radial distribution function (RDF) analyses to investigate the structural evolution from the amorphous phase to the polycrystalline phase. Moreover, the presence of structures with medium-range order in amorphous TST, which is beneficial to high-speed crystallization, was indicated by the structure factors S(Q)s. The crystallization temperature was determined to be approximately 170°C, and the grain size varied from several to dozens of nanometers. As the temperature increased, particularly above 200°C, the first single peak of the rG(r) curves transformed into double shoulder peaks due to the increasing impact of the Ti-Te bonds. In general, the majority of Ti atoms enter the SbTe lattice, whereas the remainder of the Ti atoms aggregate, leading to the appearance of TiTe2 phase separation, as confirmed by the SAED patterns, high-angle annular dark field scanning transmission electron microscopy (HAADFSTEM) images and the corresponding energy-dispersive X-ray (EDX) mappings.
AB - The crystallization process and crystal structure of the phase change material TiSbTe alloy have been successfully established, which is essential for applying this alloy in phase change memory. Specifically, transmission electron microscopy (TEM) analyses of the film annealed in situ were used in combination with selected-area electron diffraction (SAED) and radial distribution function (RDF) analyses to investigate the structural evolution from the amorphous phase to the polycrystalline phase. Moreover, the presence of structures with medium-range order in amorphous TST, which is beneficial to high-speed crystallization, was indicated by the structure factors S(Q)s. The crystallization temperature was determined to be approximately 170°C, and the grain size varied from several to dozens of nanometers. As the temperature increased, particularly above 200°C, the first single peak of the rG(r) curves transformed into double shoulder peaks due to the increasing impact of the Ti-Te bonds. In general, the majority of Ti atoms enter the SbTe lattice, whereas the remainder of the Ti atoms aggregate, leading to the appearance of TiTe2 phase separation, as confirmed by the SAED patterns, high-angle annular dark field scanning transmission electron microscopy (HAADFSTEM) images and the corresponding energy-dispersive X-ray (EDX) mappings.
UR - https://www.scopus.com/pages/publications/85006100192
U2 - 10.1117/12.2245016
DO - 10.1117/12.2245016
M3 - 会议稿件
AN - SCOPUS:85006100192
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
A2 - Gan, Fuxi
A2 - Song, Zhitang
PB - SPIE
T2 - 2016 International Workshop on Information Data Storage and 10th International Symposium on Optical Storage, IWIS/ISOS 2016
Y2 - 10 April 2016 through 13 April 2016
ER -