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Microstructure and electrical properties of textured Sr0.51Ba0.48La0.01Nb2O6 thin films

  • Z. Song*
  • , C. Lin
  • , L. Wang
  • , J. Huang
  • , D. Hesse
  • , N. D. Zakharov
  • , H. Xu
  • , M. Okuyama
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Microsystem and Information Technology
  • Max Planck Institute of Microstructure Physics
  • The University of Osaka

Research output: Contribution to journalArticlepeer-review

Abstract

Sr0.51Ba0.48La0.01Nb2O6 (SBLN) thin films were prepared on platinized silicon substrates by pulsed laser deposition (PLD) combined with annealing technique. The preferred orientation, surface morphology, composition, and interfacial properties of the SBLN thin films were characterized by X-ray diffraction, atomic force microscopy, transmission electron microscopy, X-ray energy dispersive spectroscopy, and automatic spreading resistance measurement. The ferroelectric properties were confirmed by P - E hysteresis loops. The frequency variation of the dielectric constant was measured as well.

Original languageEnglish
Pages (from-to)355-358
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume70
Issue number3
DOIs
StatePublished - Mar 2000
Externally publishedYes

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