Microstructure and electrical properties of PMNT thin films prepared by a modified sol-gel process

Aiyun Liu; Hailong Han; Linlin Wei; Peng Wang; Fangting Lin; Wangzhou Shi; Xiangjian Meng; Jinglan Sun; Junhao Chu; Chengbin Jing

doi:10.1117/12.2053858

Microstructure and electrical properties of PMNT thin films prepared by a modified sol-gel process

Aiyun Liu^*
, Hailong Han
, Linlin Wei
, Peng Wang
, Fangting Lin
, Wangzhou Shi
, Xiangjian Meng
, Jinglan Sun
, Junhao Chu
, Chengbin Jing

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMNT) thin films were prepared on (111)Pt/Ti/SiO₂/Si substrate by a modified sol-gel process with Nb₂O₅ as the niobium source. XRD analysis shows that PMNT thin films with pure perovskite were obtained by spin-coating and annealing at 700°C for 20 minutes. The remanent polarization and coercive field of the PMNT thin films are about 7.69μC/cm² and 80.75kV/cm, respectively. The dielectric and C-V curve of PMNT thin films are also investigated. The dielectric constant (ε_r) reaches 935 and the dissipation factor (tanδ)is about 0.04 at 1kHz.

Original language	English
Title of host publication	Eighth International Conference on Thin Film Physics and Applications
DOIs	https://doi.org/10.1117/12.2053858
State	Published - 2013
Event	8th International Conference on Thin Film Physics and Applications, TFPA 2013 - Shanghai, China Duration: 20 Sep 2013 → 23 Sep 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9068
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	8th International Conference on Thin Film Physics and Applications, TFPA 2013
Country/Territory	China
City	Shanghai
Period	20/09/13 → 23/09/13

Keywords

A modified sol-gel process
Electrical properties
Microstructure
PMNT ferroelectric thin films

Access to Document

10.1117/12.2053858

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Liu, A., Han, H., Wei, L., Wang, P., Lin, F., Shi, W., Meng, X., Sun, J., Chu, J., & Jing, C. (2013). Microstructure and electrical properties of PMNT thin films prepared by a modified sol-gel process. In Eighth International Conference on Thin Film Physics and Applications Article 90680R (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9068). https://doi.org/10.1117/12.2053858

@inproceedings{aec121d3c54f4cef9819090594331584,

title = "Microstructure and electrical properties of PMNT thin films prepared by a modified sol-gel process",

abstract = "0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMNT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrate by a modified sol-gel process with Nb2O5 as the niobium source. XRD analysis shows that PMNT thin films with pure perovskite were obtained by spin-coating and annealing at 700°C for 20 minutes. The remanent polarization and coercive field of the PMNT thin films are about 7.69μC/cm2 and 80.75kV/cm, respectively. The dielectric and C-V curve of PMNT thin films are also investigated. The dielectric constant (εr) reaches 935 and the dissipation factor (tanδ)is about 0.04 at 1kHz.",

keywords = "A modified sol-gel process, Electrical properties, Microstructure, PMNT ferroelectric thin films",

author = "Aiyun Liu and Hailong Han and Linlin Wei and Peng Wang and Fangting Lin and Wangzhou Shi and Xiangjian Meng and Jinglan Sun and Junhao Chu and Chengbin Jing",

year = "2013",

doi = "10.1117/12.2053858",

language = "英语",

isbn = "9780819499974",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Eighth International Conference on Thin Film Physics and Applications",

note = "8th International Conference on Thin Film Physics and Applications, TFPA 2013 ; Conference date: 20-09-2013 Through 23-09-2013",

}

Liu, A, Han, H, Wei, L, Wang, P, Lin, F, Shi, W, Meng, X, Sun, J, Chu, J & Jing, C 2013, Microstructure and electrical properties of PMNT thin films prepared by a modified sol-gel process. in Eighth International Conference on Thin Film Physics and Applications., 90680R, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9068, 8th International Conference on Thin Film Physics and Applications, TFPA 2013, Shanghai, China, 20/09/13. https://doi.org/10.1117/12.2053858

Microstructure and electrical properties of PMNT thin films prepared by a modified sol-gel process. / Liu, Aiyun; Han, Hailong; Wei, Linlin et al.
Eighth International Conference on Thin Film Physics and Applications. 2013. 90680R (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9068).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Microstructure and electrical properties of PMNT thin films prepared by a modified sol-gel process

AU - Liu, Aiyun

AU - Han, Hailong

AU - Wei, Linlin

AU - Wang, Peng

AU - Lin, Fangting

AU - Shi, Wangzhou

AU - Meng, Xiangjian

AU - Sun, Jinglan

AU - Chu, Junhao

AU - Jing, Chengbin

PY - 2013

Y1 - 2013

N2 - 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMNT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrate by a modified sol-gel process with Nb2O5 as the niobium source. XRD analysis shows that PMNT thin films with pure perovskite were obtained by spin-coating and annealing at 700°C for 20 minutes. The remanent polarization and coercive field of the PMNT thin films are about 7.69μC/cm2 and 80.75kV/cm, respectively. The dielectric and C-V curve of PMNT thin films are also investigated. The dielectric constant (εr) reaches 935 and the dissipation factor (tanδ)is about 0.04 at 1kHz.

AB - 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMNT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrate by a modified sol-gel process with Nb2O5 as the niobium source. XRD analysis shows that PMNT thin films with pure perovskite were obtained by spin-coating and annealing at 700°C for 20 minutes. The remanent polarization and coercive field of the PMNT thin films are about 7.69μC/cm2 and 80.75kV/cm, respectively. The dielectric and C-V curve of PMNT thin films are also investigated. The dielectric constant (εr) reaches 935 and the dissipation factor (tanδ)is about 0.04 at 1kHz.

KW - A modified sol-gel process

KW - Electrical properties

KW - Microstructure

KW - PMNT ferroelectric thin films

UR - https://www.scopus.com/pages/publications/84891623184

U2 - 10.1117/12.2053858

DO - 10.1117/12.2053858

M3 - 会议稿件

AN - SCOPUS:84891623184

SN - 9780819499974

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Eighth International Conference on Thin Film Physics and Applications

T2 - 8th International Conference on Thin Film Physics and Applications, TFPA 2013

Y2 - 20 September 2013 through 23 September 2013

ER -

Microstructure and electrical properties of PMNT thin films prepared by a modified sol-gel process

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